相关论文: Atomic and Electronic Structure of a Rashba $p$-$n…
The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces…
The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…
It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…
We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…
We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with…
BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…
Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio…
The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a…
In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…
We study the band structure of the $\text{Bi}_2\text{Se}_3$ topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba…
The electronic structure of Bi2Se3 is studied by angle-resolved photoemission and density functional theory. We show that the instability of the surface electronic properties, observed even in ultra-high-vacuum conditions, can be overcome…
Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We…
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction…
We present the Fermi-surface map of the spin-chiral bulk states for the non-centrosymmetric semiconductor BiTeI using de Haas-van Alphen and Shubnikov-de Haas oscillations. We identify two distinct Fermi surfaces with a unique…
The optical transitions between spin-polarized bands of the quasi-two dimensional Rashba system BiTeI are investigated using polarization resolved resonant Raman spectroscopy. We detect chiral excitations between states with opposite…
We carry out density functional theory calculation to enhance the Rashba spin splitting (RSS) of BiTeI by modifying the interlayer interaction. It is shown that RSS increases as the Te layer approaches to adjacent Bi layer or the I layer…
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to…
In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of…