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相关论文: Liquid and back gate coupling effect: towards bios…

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We investigate transport through ionic liquid gated field effect transistors (FETs) based on exfoliated crystals of semiconducting WS$_2$. Upon electron accumulation, at surface densities close to -or just larger than- 10$^{14}$ cm$^{-2}$,…

介观与纳米尺度物理 · 物理学 2015-01-27 Sanghyun Jo , Davide Costanzo , Helmuth Berger , Alberto F. Morpurgo

Highly luminescent ZnO:Na nanocrystals of size ~2 nm were synthesized using a improved sol-lyophilization process. The surface analysis such as survey scan, core-level and valence band spectra of ZnO:Na nanocrystals were studied using x-ray…

材料科学 · 物理学 2010-05-17 Amish G. Joshi , Sonal Sahai , Namita Gandhi , Y. G. Radha Krishna , D. Haranath

We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to…

材料科学 · 物理学 2007-05-23 Cristian Staii , Rui Shao , Dawn A. Bonnell , Alan T. Johnson

The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…

A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…

介观与纳米尺度物理 · 物理学 2011-10-28 Neerav Kharche , Gerhard Klimeck , Dae-Hyun Kim , Jesús. A. del Alamo , Mathieu Luisier

We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous WSi and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a…

量子物理 · 物理学 2016-11-15 H. Le Jeannic , V. B. Verma , A. Cavaillès , F. Marsili , M. D. Shaw , K. Huang , O. Morin , S. W. Nam , J. Laurat

We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport…

介观与纳米尺度物理 · 物理学 2017-09-25 A. V. Bubis , A. O. Denisov , S. U. Piatrusha , I. E. Batov , J. Becker , J. Treu , D. Ruhstorfer , G. Koblmüller , V. S. Khrapai

Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…

仪器与探测器 · 物理学 2019-06-27 Francesco Bellando , Ali Saeidi , Adrian M. Ionescu

Epitaxially grown InAs NWs are relevant for electrical sensing applications due to Fermi level pinning at NW surface, thus very sensitive to surrounding environment. While a single NW growth batch consists of millions virtually identical…

We develop an approach aimed at optimizing the parameters of a network of biochemical logic gates for reduction of the "analog" noise buildup. Experiments for three coupled enzymatic AND gates are reported, illustrating our procedure.…

分子网络 · 定量生物学 2010-10-12 Vladimir Privman , Mary A. Arugula , Jan Halamek , Marcos Pita , Evgeny Katz

The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute…

We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and…

Carbon Nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nano-scaled transistors. This paper aims at analyzing a trade-off between device performance and device size of CNT…

应用物理 · 物理学 2018-11-20 Imtiaj Khan , Ovishek Morshed , Sharif Mohammad Mominuzzaman

Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuron transistors gated by solid-state electrolyte films are fabricated on flexible plastic substrates for biochemical sensing…

材料科学 · 物理学 2015-05-20 Ning Liu , Li Qiang Zhu , Ping Feng , Chang Jin Wan , Yang Hui Liu , Yi Shi , Qing Wan

We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…

凝聚态物理 · 物理学 2009-10-30 F. G. Pikus , K. K. Likharev

The popularity of Internet-of-Things (IoT) has provided us with unprecedented opportunities to enable a variety of emerging services in a smart home environment. Among those services, sensing the liquid level in a container is critical to…

信号处理 · 电气工程与系统科学 2021-06-22 Yili Ren , Jie Yang

In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population,…

介观与纳米尺度物理 · 物理学 2021-01-26 M. Rocci , G. De Simoni , C. Puglia , D. Degli Esposti , E. Strambini , V. Zannier , L. Sorba , F. Giazotto

On-chip photonic networks have the potential to transmit and route information more efficiently than electronic circuits. Recently, a number of silicon-based optical devices including modulators, buffers, and wavelength converts have been…

光学 · 物理学 2015-05-19 Jacob T. Robinson , Michal Lipson

With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits which are able to meet highly challenging RF frontend specifications. Silicon-on-insulator (SOI) technology is one of the leading platforms for…

Developing fast, accurate and scalable techniques for quantum state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to…

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