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We analyze the probability density distribution in a topological insulator slab of finite thickness, where the bulk and surface states are allowed to hybridize. By using an effective continuum Hamiltonian approach as a theoretical…

介观与纳米尺度物理 · 物理学 2023-12-11 Jorge David Castaño-Yepes , Enrique Muñoz

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007].…

介观与纳米尺度物理 · 物理学 2011-03-18 D. Hsieh , Y. Xia , L. Wray , D. Qian , J. H. Dil , F. Meier , L. Patthey , J. Osterwalder , G. Bihlmayer , Y. S. Hor , R. J. Cava , M. Z. Hasan

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…

介观与纳米尺度物理 · 物理学 2015-03-17 Oleg V. Yazyev , Joel E. Moore , Steven G. Louie

Topological insulators represent a paradigm shift in surface physics. The most extensively studied Bi$_2$Se$_3$-type topological insulators exhibit layered structures, wherein neighboring layers are weakly bonded by van der Waals…

材料科学 · 物理学 2016-01-22 Can Li , Torben Winzer , Aron Walsh , Binghai Yan , Catherine Stampfl , Aloysius Soon

We develop an accurate nanoelectronic modeling approach for realistic three-dimensional topological insulator nanostructures and investigate their low-energy surface-state spectrum. Starting from the commonly considered four-band…

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the recently discovered 3D topological insulator Bi1-xSbx [D. Hsieh et al., Nature 452, 970 (2008)]. By modulating the…

介观与纳米尺度物理 · 物理学 2010-01-12 D. Hsieh , L. A. Wray , D. Qian , Y. Xia , Y. S. Hor , R. J. Cava , M. Z. Hasan

Based on group theoretical arguments we derive the most general Hamiltonian for the $\text{Bi}_2\text{Se}_3$-class of materials including terms to third order in the wave vector, first order in electric and magnetic fields, first order in…

材料科学 · 物理学 2018-09-11 Mathias Rosdahl Jensen , Jens Paaske , Anders Mathias Lunde , Morten Willatzen

We put forward a tight-binding model for rhombohedral topological insulators materials with the space group $D^{5}_{3d}(R\bar{3}m)$. The model describes the bulk band structure of these materials over the whole Brillouin zone. Within this…

介观与纳米尺度物理 · 物理学 2018-07-11 Carlos Mera Acosta , Matheus P. Lima , Antonio J. R. da Silva , A. Fazzio , C. H. Lewenkopf

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…

介观与纳米尺度物理 · 物理学 2015-11-12 Weiguang Ye , A. B. Pakhomov , Shuigang Xu , Huanhuan Lu , Zefei Wu , Yu Han , Tianyi Han , Yingying Wu , Gen Long , Jiangxiazi Lin , Gu Xu , Yuan Cai , Lu-Tao Weng , Ning Wang

We have investigated the band structure of the bulk crystal and the (001) surface of the \beta-InTe layered crystal subjected to biaxial stretching in the layer plane. The calculation has been carried out using the full-potential linearized…

材料科学 · 物理学 2017-08-31 F. M. Hashimzade , D. A. Huseinova , Z. A. Jahangirli , N. T. Mamedov , B. H. Mehdiyev

Topological insulators in the Bi$_2$Se$_3$ family manifest helical Dirac surface states that span the topologically ordered bulk band gap. Recent scanning tunneling microscopy measurements have discovered additional states in the bulk band…

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…

材料科学 · 物理学 2012-02-15 M. S. Bahramy , B. -J. Yang , R. Arita , N. Nagaosa

We investigated the electronic properties of the topological insulator Bi$_{2}$Te$_{3}$ by scanning tunneling microscopy and spectroscopy at low temperature. We obtained high-resolution quasiparticle interference data of the topological…

Topological insulators are novel macroscopic quantum-mechanical phase of matter, which hold promise for realizing some of the most exotic particles in physics as well as application towards spintronics and quantum computation. In all the…

The unoccupied part of the band structure of topological insulators Bi$_2$Te$_{x}$Se$_{3-x}$ ($x=0,2,3$) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface…

We study the surface resistivity of a three-dimensional topological insulator when the boundaries exhibit a non trivial curvature. We obtain an analytical solution for a spherical topological insulator, and we show that a non trivial…

介观与纳米尺度物理 · 物理学 2011-06-27 V. Parente , P. Lucignano , P. Vitale , A. Tagliacozzo , F. Guinea

We show that the surface states in topological insulators can be understood based on a well-known Shockley model, a one-dimensional tight-binding model with two atoms per elementary cell, connected via alternating tunneling amplitudes. We…

强关联电子 · 物理学 2012-08-30 Sergey S. Pershoguba , Victor M. Yakovenko

We present our angle resolved photoelectron spectroscopy (ARPES) and density functional theory results on quaternary topological insulator (TI) BiSbTe1.25Se1.75 (BSTS) confirming the non-trivial topology of the surface state bands (SSBs) in…

材料科学 · 物理学 2023-10-31 H. Lohani , P. Mishra , A. Banerjee , K. Majhi , R. Ganesan , U. Manju , D. Topwal , P. S. Anil Kumar , B. R. Sekhar

The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only…

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard…

材料科学 · 物理学 2015-08-17 C. E. ViolBarbosa , Chandra Shekhar , Binghai Yan , S. Ouardi , G. H. Fecher , C. Felser