相关论文: SiGe quantum dots for fast hole spin Rabi oscillat…
Spin qubits are typically operated in the lowest orbital of a quantum dot to minimize interference from nearby states. In valence-band hole systems, strong spin-orbit coupling links spin and orbital degrees of freedom, strongly influencing…
Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum…
A hole spin is a potential solid-state q-bit, that may be more robust against nuclear spin induced dephasing than an electron spin. Here we propose and demonstrate the sequential preparation, control and detection of a single hole spin…
Emerging theoretical concepts for quantum technologies have driven a continuous search for structures where a quantum state, such as spin, can be manipulated efficiently. Central to many concepts is the ability to control a system by…
Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in…
We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced…
We show that the g-factor and the spin-flip time T_{1} of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave function penetration into the barrier. When this electric…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
We demonstrate direct measurements of the spin-orbit interaction and Land\'e g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a…
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade…
Increasing the number of electrons in electrostatically confined quantum dots can enable faster qubit gates. Although this has been experimentally demonstrated, a detailed quantitative understanding has been missing. Here we study one- and…
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit…
Germanium hole spin qubits based on strained Ge/SiGe quantum well have attracted much research attention due to the strong spin-orbit coupling. In particular, the strain dependence of the heavy-hole--light-hole mixing and thus the…
Solid-state qubit manipulation and read-out fidelities are reaching fault-tolerance, but quantum error correction requires millions of physical qubits and thus a scalable quantum computer architecture. To solve signal-line bandwidth and…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
In this paper, several nanodevices which realize basic single heavy hole qubit operations are proposed and supported by time dependent self consistent Poisson-Schr\"{o}dinger calculations using a four band heavy hole-light hole model. In…
Engineered spin-electric coupling enables spin qubits in semiconductor nanostructures to be manipulated efficiently and addressed individually. While synthetic spin-orbit coupling using a micromagnet is widely used for driving qubits based…
We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with…
We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance,…