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Highly oriented VO2 thin films were grown on sapphire substrates by the sol-gel method that includes a low pressure annealing in an oxygen atmosphere. This reduction process effectively promotes the formation of the VO2 phase over a…

We present a density-functional theory study of the effects of oxygen vacancies on the structural and electronic properties of vanadium dioxide (VO$_2$). Our motivation is the reported suppression of the metal-insulator transition by oxygen…

材料科学 · 物理学 2025-11-11 Oskar Leibnitz , Peter Mlkvik , Nicola A. Spaldin , Claude Ederer

Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…

材料科学 · 物理学 2024-01-01 Achintya Dutta , Ashok P , Amit Verma

Vanadium oxide (VOx) is a material of significant interest due to its metal-insulator transition (MIT) properties as well as its diverse stable antiferromagnetism depending on the valence states of V and O with distinct MIT transitions and…

Molybdenum oxide films offer a rich variety of properties for diverse applications, but exclusive synthesis of desired phases is a major challenge. Here, we demonstrate that oxygen flow ratio fO2 = [O2]/[Ar+O2] is crucial not only for phase…

We have carried out extensive comparative studies of the structural and transport properties of CaRuO$_3$ thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly…

Vanadium sesquioxide, V2O3, is a prototypical metal-to-insulator system where, in temperature-dependent studies, the transition always coincides with a corundum-to-monoclinic structural transition. As a function of pressure, V2O3 follows…

Electrodynamic properties of La-doped SrTiO3 thin films with controlled elemental vacancies have been investigated using optical spectroscopy and thermopower measurement. In particular, we observed a correlation between the polaron…

材料科学 · 物理学 2015-05-13 Woo Seok Choi , Hyang Keun Yoo , Hiromichi Ohta

Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of…

Methane (CH_4) gas sensing properties of novel vanadium dioxide (VO_2) nanostructured films is reported for the first time. The single phase nanostructures are synthesized by pulsed dc-magnetron sputtering of V target followed by oxidation…

材料科学 · 物理学 2015-09-02 A. K. Prasad , S. Amirthapandian , S. Dhara , S. Dash , N. Murali , A. K. Tyagi

Vanadium dioxide (VO$_{2}$) undergoes a first-order metal-insulator transition (MIT) upon cooling near room temperature, concomitant with structural change from rutile to monoclinic. Accurate characterization of lattice vibrations is vital…

材料科学 · 物理学 2017-11-22 Yi Xia , Maria K. Y. Chan

We report the growth of undoped and Fe (2 and 5 at. percentage) doped molybdenum oxide thin films on c-plane of sapphire substrate using pulsed laser ablation. X-ray diffraction results show that the films are oriented in (100) direction…

材料科学 · 物理学 2009-12-08 Ram Prakash , D. M. Phase , R. J. Choudhary , Ravi Kumar

We report the growth of ultrathin VO$_{2}$ films on rutile TiO$_{2}$ (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and…

The spectacular metal-to-insulator transition of V2O3 can be progressively suppressed in thin film samples. Evidence for phase separation was observed using microbridges as a mesoscopic probe of transport properties where the same film…

材料科学 · 物理学 2009-11-13 C. Grygiel , A. Pautrat , W. C. Sheets , W. Prellier , B. Mercey , L. Mechin

We investigated the inhomogeneous electronic properties at the surface and interior of VO_{2} thin films that exhibit a strong first-order metal-insulator transition (MIT). Using the crystal structural change that accompanies a VO_{2} MIT,…

强关联电子 · 物理学 2009-11-13 Y. J. Chang , J. S. Yang , Y. S. Kim , D. H. Kim , T. W. Noh , D. -W. Kim , E. OH , B. Kahng , J. -S. Chung

Thin films of Co2MnSi have been grown on a-plane sapphire substrates from three elemental targets by dc magnetron co-sputtering. These films are single phase, have a strong (110) texture and a saturation magnetization of 4.95 uB/formula…

材料科学 · 物理学 2009-11-10 L. J. Singh , Z. H. Barber , Y. Miyoshi , Y. Bugoslavsky , W. R. Branford , L. F. Cohen

Transition metal nitrides are a fascinating class of hard coating material that provide an excellent platform for investigating superconductivity and fundamental electron phonon interactions. In this work the structural morphological and…

The effect of oxygen partial pressure during the pre-calcination step (high vacuum, air, nitrogen, and oxygen) on the crystal structure, microstructure, and electrical properties of Na0.5Bi0.465Sr0.02Eu0.005TiO3 oxide-ion-conducting…

光学 · 物理学 2026-05-27 Zongxue Wang , Duanting Yan , Hancheng Zhu

We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser…

材料科学 · 物理学 2019-06-11 Yang Liu , Shanyuan Niu , Thomas Orvis , Haimang Zhang , Han Wang , Jayakanth Ravichandran

The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of non-uniform strain in modulating optical, electronic and…