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相关论文: Performance Analysis of Strained Monolayer MoS$_{2…

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We report on a modified transfer technique for atomically thin materials integrated onto microelectromechanical systems (MEMS) for studying strain physics and creating strain-based devices. Our method tolerates the non-planar structures and…

In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, $\alpha$, and $\beta$ phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and…

介观与纳米尺度物理 · 物理学 2019-05-14 Shoeib Babaee Touski , Mohammad Ariapour , Manouchehr Hosseini

We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate…

应用物理 · 物理学 2020-07-01 Ansh , Jeevesh Kumar , Gaurav Sheoran , Mayank Shrivastava

Nanomaterials are prone to influence by chemical adsorption because of their large surface to volume ratios. This enables sensitive detection of adsorbed chemical species which, in turn, can tune the property of the host material. Recent…

材料科学 · 物理学 2015-06-18 Liangzhi Kou , Aijun Du , Changfeng Chen , Thomas Frauenheim

Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a…

Monolayers (ML) of Group-6 transition-metal dichalcogenides (TMDs) are semiconducting two-dimensional materials with direct bandgap, showing promising applications in various fields of science and technology, such as nanoelectronics and…

We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D…

Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain…

介观与纳米尺度物理 · 物理学 2020-04-14 Ashby Phillip John , Arya Thenapparambil , Madhu Thalakulam

In this work, we report on the mechanical responses and fracture behavior of pristine and defected monolayer 1T-Titanium Disulfide using classical molecular dynamics simulation. We investigated the effect of temperature, strain rate and…

材料科学 · 物理学 2020-03-18 Tanmay Sarkar Akash , Rafsan A. S. I. Subad , Pritom Bose , Md Mahbubul Islam

The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken…

介观与纳米尺度物理 · 物理学 2015-07-22 Sajedeh Manzeli , Adrien Allain , Amirhossein Ghadimi , Andras Kis

We performed systematic transport measurements on FeSe single crystals with applying in-plane biaxial strain $\varepsilon$ ranging from -0.96% to 0.23%. Biaxial strain was introduced by firmly gluing samples to various substrate materials…

超导电性 · 物理学 2021-04-07 M. Nakajima , Y. Ohata , S. Tajima

First-principles calculations, within the framework of density functional theory, have been performed on the well-studied 2H and the less explored 1T$^{\prime}$ phase of single-layer MoS$_{2}$. We have addressed the strain-induced…

材料科学 · 物理学 2023-03-01 Saumen Chaudhuri , A. K. Das , G. P. Das , B. N. Dev

Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density…

材料科学 · 物理学 2021-01-01 San-Dong Guo , Yu-Tong Zhu , Wen-Qi Mu

Layered materials such as graphite and transition metal dichalcogenides have extremely anisotropic mechanical properties owing to orders of magnitude difference between in-plane and out-of-plane interatomic interaction strengths. Although…

材料科学 · 物理学 2017-11-10 Jae-Ung Lee , Sungjong Woo , Jaesung Park , Hee Chul Park , Young-Woo Son , Hyeonsik Cheong

Nonlinear optical materials of atomic thickness--such as non-centrosymmetric 2H transition metal dichalcogenide monolayers--have a second order nonlinear susceptibility ($\chi^{(2)}$) whose intensity can be tuned by strain. However, whether…

Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By…

We investigate the effects of the in-plane biaxial strain and charge doping on the charge density wave (CDW) order of monolayer $1T$-TiSe$_2$ by using the first-principles calculations. Our results show that the tensile strain can…

材料科学 · 物理学 2017-10-11 M. J. Wei , W. J. Lu , R. C. Xiao , H. Y. Lv , P. Tong , W. H. Song , Y. P. Sun

Deposition of MoS2 on (111)-Au alters the electronic properties of MoS2. In this study, we investigate the free-standing MoS2 monolayer and the MoS2~\(111)-Au heterostructure, with and without strain, as well as defects of interest in…

材料科学 · 物理学 2024-03-05 Roozbeh Anvari , Wennie Wang

Within a two-band $k\cdot p$ method we analyze different types of strain for the $K$ valley optical characteristics of a freestanding monolayer MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We predict that circular polarization selectivity for…

介观与纳米尺度物理 · 物理学 2018-10-23 Shahnaz Aas , Ceyhun Bulutay

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen