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相关论文: Performance Analysis of Strained Monolayer MoS$_{2…

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We use all-atom molecular dynamics simulations informed by density functional theory calculations to investigate aqueous ion transport across sub-nanoporous monolayer molybdenum disulfide (MoS$_2$) membranes subject to varying tensile…

应用物理 · 物理学 2019-01-28 A. Fang , K. Kroenlein , A. Smolyanitsky

Density functional theory is used to study the effect of compressive and tensile biaxial strain on Mn$_{3}$GaN. Mn$_{3}$GaN is a non-collinear antiferromagnetic antiperovskite with a similar structure to that of an ideal cubic oxide…

材料科学 · 物理学 2025-01-14 Roman Malyshev , Ingeborg-Helene Svenum , Sverre M. Selbach , Thomas Tybell

We investigate the effect of mechanical strain on the dynamics of thin $\mathrm{MoS_2}$ nanodrum resonators. Using a piezoelectric crystal, compressive and tensile biaxial strain is induced in initially flat and buckled devices. In the flat…

介观与纳米尺度物理 · 物理学 2015-09-11 E. Kramer , D. J. J. van Dorp , R. van Leeuwen , W. J. Venstra

We utilize density functional theory to calculate the edge energy and edge stress for monolayer MoS$_{2}$ nanoribbons. In contrast to previous reports for graphene, for both armchair and zigzag chiralities, the edge stresses for MoS$_{2}$…

材料科学 · 物理学 2013-10-25 Zenan Qi , Penghui Cao , Harold S. Park

In this work we present a study on the impact of various intrinsic deformations like ripples, twist, wrap on the electronic properties of ultra-short monolayer MoS2 channels. The effect of deformation (3-7o twist or wrap and 0.3-0.7…

材料科学 · 物理学 2013-08-23 Amretashis Sengupta , Santanu Mahapatra

We study the effects of the uniaxial tensile strain and shear deformation as well as their combinations on the electronic properties of single-layer black phosphorene. The evolutions of the strain-dependent band gap are obtained using the…

Graphite-like carbon nitride (g-$\mathrm{C_3N_4}$) is considered as a promising candidate for energy materials. In this work, the biaxial strain (-4\%-4\%) effects on piezoelectric properties of g-$\mathrm{C_3N_4}$ monolayer are studied by…

材料科学 · 物理学 2021-02-03 San-Dong Guo , Wen-Qi Mu , Yu-Tong Zhu

The increase of a thermoelectric material's figure of merit (ZT value) is limited by the interplay of the transport coefficients. Here we report the greatly enhanced thermoelectric performance of a ZrS2 monolayer by the biaxial tensile…

介观与纳米尺度物理 · 物理学 2016-07-14 H. Y. Lv , W. J. Lu , D. F. Shao , H. Y. Lu , Y. P. Sun

Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…

We combine quantum-chemical calculations and molecular dynamics simulations to consider aqueous ion flow across non-axisymmetric nanopores in monolayer graphene and MoS$_2$. When the pore-containing membrane is subject to uniaxial tensile…

应用物理 · 物理学 2020-04-30 A. Smolyanitsky , A. Fang , A. F. Kazakov , E. Paulechka

Very recently, two-dimensional(2D) boron sheets (borophene) with rectangular structure has been grown successfully on single crystal Ag(111) substrates.The fabricated boroprene is predicted to have unusual mechanical properties. We…

介观与纳米尺度物理 · 物理学 2016-08-10 Haifeng Wang , Qingfang Li , Yan Gao , F. Miao , Xiang-Feng Zhou , X. G. Wan

We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p- channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an…

介观与纳米尺度物理 · 物理学 2014-02-28 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

We show how the excitonic features of biaxial MoS2 flakes are very sensitive to biaxial strain. We find a lower bound for the gauge factors of the A exciton and B exciton of (-41 +- 2) meV/% and (-45 +- 2) meV/% respectively, which are…

介观与纳米尺度物理 · 物理学 2020-06-15 Felix Carrascoso , Der-Yuh Lin , Riccardo Frisenda , Andres Castellanos-Gomez

Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at…

In this work, a compact transport model has been developed for monolayer transition metal dichalcogenide (TMDC) channel MOSFET. The analytical model solves the Poisson's equation for the inversion charge density to get the electrostatic…

介观与纳米尺度物理 · 物理学 2018-04-30 Ehsanur Rahman , Abir Shadman , Imtiaz Ahmed , Saeed Uz Zaman Khan , Quazi D. M. Khosru

We study the transport properties of deeply scaled monolayer MoS2 n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic quantum transport simulations with an atomistic tight-binding Hamiltonian…

介观与纳米尺度物理 · 物理学 2013-11-27 Jiwon Chang , Leonard F. Register , Sanjay K. Banerjee

In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1-xGex body with a compositionally graded Si1-xGex…

材料科学 · 物理学 2010-08-19 Raghvendra S. Saxena , M. Jagadesh Kumar

Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to…

We perform classic molecular dynamics simulations to comparatively investigate the mechanical properties of single-layer MoS2 and a graphene/MoS2/graphene heterostructure under uniaxial tension. We show that the lattice mismatch between…

材料科学 · 物理学 2014-07-29 Jin-Wu Jiang , Harold S. Park

This study delves into the interaction between a monolayer of molybdenum disulfide (MoS$_2$) and a single Perylene Orange (PO) molecule, representative of inorganic and organic semiconductor materials, respectively. Investigation of the…

材料科学 · 物理学 2024-07-16 Mohammed El Amine Miloudi , Oliver Kühn