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相关论文: Mott-Hubbard transition in V2O3 revisited

200 篇论文

We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott-insulator to metal critical endpoint is investigated in detail as a function of pressure and…

强关联电子 · 物理学 2009-11-10 P. Limelette , A. Georges , D. Jerome , P. Wzietek , P. Metcalf , J. M. Honig

Magnetic phase diagram and Mott transition are studied in the Hubbard model on the anisotropic triangular lattice at zero temperature and half-filling by the variational cluster approximation, taking into account N\'eel, 120$^\circ$ N\'eel,…

强关联电子 · 物理学 2015-06-18 A. Yamada

We show numerically that the nature of the doping induced metal-insulator transition in the two-dimensional Hubbard model is radically altered by the inclusion of a term, $W$, which depends upon a square of a single-particle…

强关联电子 · 物理学 2009-10-30 F. F. Assaad , M. Imada

We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is…

强关联电子 · 物理学 2011-04-06 G. Sordi , A. Amaricci , M. J. Rozenberg

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

We discuss the recently discovered system $Sr Cu_2 (BO_3)_2$, a realization of an exactly solvable model proposed two decades earlier. We propose its interpretation as a Mott Hubbard insulator. The possible superconducting phase arising…

强关联电子 · 物理学 2009-11-07 B Sriram Shastry , Brijesh Kumar

The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and…

We study the Mott transition in Hubbard models with a degenerate band on different 3-dimensional lattices. While for a non-degenerate band only the half-filled system may exhibit a Mott transition, with degeneracy there can be a transition…

强关联电子 · 物理学 2009-10-31 Erik Koch , Olle Gunnarsson , Richard M. Martin

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

We derived a simple metal-insulator criterion in analytical form for the doped Mott-Hubbard materials. Its readings closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings…

强关联电子 · 物理学 2015-06-23 V. A. Gavrichkov

We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of…

高能物理 - 理论 · 物理学 2015-10-26 Yi Ling , Peng Liu , Chao Niu , Jian-Pin Wu

We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…

量子气体 · 物理学 2015-02-03 Ahmet Keleş , M. Ö. Oktel

The paramagnetic phase of the one-band Hubbard model is studied at zero-temperature, within the framework of dynamical mean-field theory, and for general particle-hole asymmetry where a doping-induced Mott transition occurs. Our primary…

强关联电子 · 物理学 2016-02-01 David E. Logan , Martin R. Galpin

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

We report on the study of insulator-to-metal transition in post-perovskite compound CaIrO3. It is discovered that a gradual chemical substitution of calcium by yttrium leads to the onset of strong metallic behavior in this compound. This…

强关联电子 · 物理学 2015-06-19 J. Gunasekera , Y. Chen , J. W. Kremenak , P. F. Miceli , D. K. Singh

We show that the Mott metal-insulator transition in the standard one-band Hubbard model can be understood as a topological phase transition. Our approach is inspired by the observation that the mid-gap pole in the self-energy of a Mott…

强关联电子 · 物理学 2020-08-26 Sudeshna Sen , Patrick J. Wong , Andrew K. Mitchell

Neutron scattering, magnetometry, and muon spin rotation ($\mu$SR) measurements were performed to investigate the magnetic order and spin dynamics across the ferromagnet-to-paramagnet transition in the hole-doped Mott insulator…

强关联电子 · 物理学 2025-02-19 S. Hameed , I. Khayr , J. Joe , G. Q. Zhao , Y. Cai , K. M. Kojima , S. Chi , T. J. Williams , M. Matsuda , Y. J. Uemura , M. Greven

We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…

强关联电子 · 物理学 2014-05-20 Aaram J. Kim , M. Y. Choi , Gun Sang Jeon