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相关论文: Mott-Hubbard transition in V2O3 revisited

200 篇论文

A detailed study of the paramagnetic to ferromagnetic phase transition in the one-band Hubbard model in the presence of binary alloy disorder is presented. The influence of the disorder (with concentration $x$ and $1-x$ of the two alloy…

强关联电子 · 物理学 2009-11-07 Krzysztof Byczuk , Martin Ulmke , Dieter Vollhardt

We study the quantum phase transition from an insulator to a metal realized at t'=t'_c > 0.5t in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t) and next-nearest-neighbor (t') hopping. The study is carried…

强关联电子 · 物理学 2007-05-23 G. I. Japaridze , R. M. Noack , D. Baeriswyl

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

材料科学 · 物理学 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer

The three-band Hubbard model is a fundamental model for understanding properties of the Copper-Oxygen planes in cuprate superconductors. We use cutting-edge auxiliary-field quantum Monte Carlo (AFQMC) methods to investigate ground state…

超导电性 · 物理学 2019-04-17 Ettore Vitali , Hao Shi , Adam Chiciak , Shiwei Zhang

Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within the Gutzwiller approximation. For any rational filling with $x$ (integer) electrons per site it is found that metal-insulator transition…

凝聚态物理 · 物理学 2009-10-22 Jian Ping Lu

Motivated by recent experiments of a novel 5$d$ Mott insulator in Sr$_2$IrO$_4$, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling $\lambda$. The variational Monte Carlo method is used to obtain the…

强关联电子 · 物理学 2010-11-25 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field…

强关联电子 · 物理学 2009-09-22 Eberhard Jakobi , Nils Blümer , Peter van Dongen

We investigate the ground-state phase diagram of the one-dimensional "ionic" Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix…

强关联电子 · 物理学 2009-11-10 A. P. Kampf , M. Sekania , G. I. Japaridze , Ph. Brune

We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of interlayer hopping t_perp and on-site…

强关联电子 · 物理学 2014-03-11 Robert Rüger , Luca F. Tocchio , Roser Valentí , Claudius Gros

We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is…

强关联电子 · 物理学 2018-02-14 M. Zhu , J. Peng , T. Zou , K. Prokes , S. D. Mahanti , T. Hong , Z. Q. Mao , G. Q. Liu , X. Ke

In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using…

强关联电子 · 物理学 2009-11-07 H. Fehske , A. P. Kampf , M. Sekania , G. Wellein

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

Strongly correlated materials often undergo a Mott metal-insulator transition, which is tipically first-order, as a function of control parameters like pressure. Upon doping, rich phase diagrams with competing instabilities are found. Yet,…

We present a correlated {\it ab initio} description of the paramagnetic phase of Tl$_2$Mn$_2$O$_7$, employing a combined local density approximation (LDA) with multiorbital dynamical mean field theory (DMFT) treatment. We show that the…

强关联电子 · 物理学 2009-11-11 L. Craco , C. I. Ventura , A. N. Yaresko , E. Müller-Hartmann

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…

We report the application of the density-matrix renormalization group method to a spatially anisotropic two-dimensional Hubbard model at half-filling. We find a deconfinement transition induced by the transverse hopping parameter $t_y$ from…

强关联电子 · 物理学 2015-05-28 S. Moukouri , Eitan Eidelstein

Unusual metallic states involving breakdown of the standard Fermi-liquid picture of long-lived quasiparticles in well-defined band states emerge at low temperatures near correlation-driven Mott transitions. Prominent examples are…

材料科学 · 物理学 2018-11-14 L. Craco , M. S. Laad , S. Leoni

We study the metal-insulator transition and magnetic ordering in the Hubbard model using the particle-hole mapping. The analysis simplifies near the ferromagnetic limit. We find that the two dimensional(2D) Hubbard model has a charge…

凝聚态物理 · 物理学 2009-10-22 Q. P. Li , Robert Joynt

We investigated the optical properties of (Ca,Sr)RuO_3 films on the borderline of a metal-insulator (M-I) transition. Our results show all of the predicted characteristics for a metallic Mott-Hubbard system, including (i) a mass enhancement…

强关联电子 · 物理学 2009-10-31 J. S. Ahn , J. Bak , H. S. Choi , T. W. Noh , J. E. Han , Yunkyu Bang , J. H. Cho , Q. X. Xia

Pressure dependence of the conductivity and thermoelectric power is measured through the Mott transition in the layer organic conductor EtMe3P[Pd(dmit)2]2. The critical behavior of the thermoelectric effect provides a clear and objective…

强关联电子 · 物理学 2015-03-17 M. Abdel-Jawad , R. Kato , I. Watanabe , N. Tajima , Y. Ishii