相关论文: Optical spin orientation and depolarization in Ge

Optical orientation of exciton and carrier spins by circularly polarized light is the basic phenomenon in the spin physics of semiconductors. Here, we investigate spin orientation in MAPbI3 lead halide perovskite crystals at the cryogenic…

A quantum theory of the spin-dependent scattering of semiconductor electrons by a Schottky barrier at an interface with a ferromagnet is presented. The reflection of unpolarized non-equilibrium carriers produces spontaneous…

Undoped and slightly Eu-doped SmB6 show the opening of a gap with decreasing temperature below ~150 K. The spectral shapes near the Fermi level (EF) at 15 K have shown strong increase in intensity of a peak at a binding energy (EB) of…

Origin of room temperature visible photoluminescence (PL) from defect free germanium (Ge) nanoparticles have been discussed here. The Ge nanoparticles produced by laser-induced etching technique show broad visible PL around 2.0 - 2.2 eV at…

Absorption of circularly polarized light in semiconductors is known to result in optical orientation of electron and hole spins. It has been shown here that in semiconductor quantum well structures spin orientation of carriers can be…

We report the first experimental demonstration of electrical spin injection, transport and detection in bulk germanium (Ge). The non-local magnetoresistance in n-type Ge is observable up to 225K. Our results indicate that the spin…

Doped ZnO is a promising material for spintronics applications. For such applications, it is important to understand the spin dynamics and particularly the spin coherence of this II-VI semiconductor. The spin lifetime $\tau_{s}$ has been…

The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we…

Electron spin dynamics are studied in Ga-doped ZnO single crystals by time-resolved Faraday and Kerr rotation spectroscopies. Long-lived spin coherence with two dephasing processes is discovered where the characteristic time is up to 5.2 ns…

The optical response of bulk germanium sulfide (GeS) is investigated systematically using different polarization-resolved experimental techniques, such as photoluminescence (PL), reflectance contrast (RC), and Raman scattering (RS). It is…

We have measured the donor-bound electron spin dynamics in cubic GaN by time-resolved Kerr rotation experiments. The ensemble electron spin dephasing time in this quantum dot like system characterized by a Bohr radius of 2.5 nm is of the…

Non-local carrier injection/detection schemes lie at the very foundation of information manipulation in integrated systems. This paradigm consists in controlling with an external signal the channel where charge carriers flow between a…

We performed photoinduced inverse spin Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons, photogenerated at the direct gap of Ge using circularly polarized light, provide a net spin…

We investigate the emission of multimodal polarized light from Light Emitting Devices due to spin-aligned carriers injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection…

We theoretically investigate the indirect optical injection of carriers and spins in bulk silicon, using an empirical pseudopotential description of electron states and an adiabatic bond charge model for phonon states. We identify the…

We develop a theory of spin-dependent phenomena in the streaming regime characterized by ballistic acceleration of electrons in the moderate electric field until they achieve the optical phonon energy and abruptly emit the phonons. It is…

The spin-dependent recombination (SDR) has been observed in GaAs_{1-x}N_{x} (x = 2.1, 2.7, 3.4%) at room temperature. It reveals itself in a decrease of the edge photoluminescence (PL) intensity by more than a factor of 3 when either the…

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…

We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relatively low temperatures. We show that spin polarization of…

A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and demonstrated at room temperature. The light shed horizontally on the side of the device is refracted and introduced directly into a thin…