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相关论文: Large-scale 2D Electronics based on Single-layer M…

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Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…

介观与纳米尺度物理 · 物理学 2024-05-28 Sudipta Majumder , Vaibhav Walve , Rahul Chand , Gokul M. A. , Sooyeon Hwang , G. V. Pavan Kumar , Aparna Deshpande , Atikur Rahman

Semiconductor research has shifted towards exploring two-dimensional (2D) materials as candidates for next-generation electronic devices due to the limitations of existing silicon technology. Transition Metal Dichalcogenides (TMDCs) stand…

介观与纳米尺度物理 · 物理学 2024-09-12 Sameer Kumar Mallik

Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control formation of defects during the synthesis process is an…

Two-dimensional MoS2 is a crystalline semiconductor with high potential for numerous technologies. Research in recent years has sought to exploit the direct band gap and high carrier mobility properties of monolayer MoS2 for functional…

材料科学 · 物理学 2018-11-14 Paul Quayle , Bin Zhang , Jacob Leach , Brian Bersch , Joshua Robinson , Shanee Pacley

Single-layer MoS2 is an attractive semiconducting analogue of graphene that combines high mechanical flexibility with a large direct bandgap of 1.8 eV. On the other hand, bulk MoS2 is an indirect bandgap semiconductor similar to silicon,…

Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin…

Lateral heterostructures of 2D transition metal dichalcogenide offer a powerful platform to investigate photonic and electronic phenomena at atomically sharp interfaces. However, their controlled engineering, including tuning lateral domain…

Atmospheric pressure chemical vapor deposition (APCVD) has been used extensively for synthesizing two-dimensional (2D) materials, due to its low cost and promise for high-quality monolayer crystal synthesis. However, the understanding of…

应用物理 · 物理学 2020-06-02 Dong Zhou , Ji Lang , Nicholas Yoob , Raymond R. Unocic , Qianhong Wu , Bo Li

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by…

Real-time monitoring is essential for understanding and eventually precise controlling of the growth of two dimensional transition-metal dichalcogenides (2D TMDCs). However, it is very challenging to carry out such kind of studies on…

材料科学 · 物理学 2018-11-02 C. B. López-Posadas , Yaxu Wei , Wanfu Shen , Daniel Kahr , Michael Hohage , Lidong Sun

Nano-thick metallic transition metal dichalcogenides such as VS$_{2}$ are essential building blocks for constructing next-generation electronic and energy-storage applications, as well as for exploring unique physical issues associated with…

Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer lifetime as compared to direct excitons. This property can be…

材料科学 · 物理学 2024-09-13 Umakanta Patra , Faiha Mujeeb , Abhiram K , Jai Israni , Subhabrata Dhar

The defect-free transfer of chemical vapour deposition (CVD) grown monolayer MoS2 is important for both fabrication of 2D devices and fundamental point of view for various studies where substrate effects need to be minimized. Among many…

材料科学 · 物理学 2021-01-19 C. Abinash Bhuyan , Kishore K. Madapu , Sandip Dhara

The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2…

材料科学 · 物理学 2014-02-11 Edwin W. Lee , Lu Ma , Digbijoy N. Nath , Choong Hee Lee , Yiying Wu , Siddharth Rajan

Semiconducting transition metal dichalcogenides (TMDCs) have attracted a lot of attention recently, because of their interesting electronic, optical, and mechanical properties. Among large numbers of TMDCs, monolayer of tungsten diselenides…

材料科学 · 物理学 2015-05-19 Bilu Liu , Mohammad Fathi , Liang Chen , Ahmad Abbas , Yuqiang Ma , Chongwu Zhou

MoS2 is a highly interesting material system, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS$_2$ films grown by…

材料科学 · 物理学 2014-05-28 G. Plechinger , J. Mann , E. Preciado , D. Barroso , A. Nguyen , J. Eroms , C. Schüller , L. Bartels , T. Korn

We fabricated the 1D nanoscrolled monolayer MoS2 (1L-MoS2) with superior characteristics from 1L-MoS2 film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which…

材料科学 · 物理学 2024-02-22 C. Abinash Bhuyan , Kishore K. Madapu , K. Prabakar , K. Ganesan , A. Pandian , Sandip Dhara

Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a…

Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of…