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相关论文: Evolution of Electronic Structure in Atomically Th…

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Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs),…

Van der Waals heterostructures have recently emerged as a new class of materials, where quantum coupling between stacked atomically thin two-dimensional (2D) layers, including graphene, hexagonal-boron nitride, and transition metal…

介观与纳米尺度物理 · 物理学 2014-08-26 Xiaoping Hong , Jonghwan Kim , Su-Fei Shi , Yu Zhang , Chenhao Jin , Yinghui Sun , Sefaattin Tongay , Junqiao Wu , Yanfeng Zhang , Feng Wang

We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to…

介观与纳米尺度物理 · 物理学 2013-09-23 Hiram J. Conley , Bin Wang , Jed I. Ziegler , Richard F. Haglund , Sokrates T. Pantelides , Kirill I. Bolotin

Monolayer transition-metal dichalcogenides are direct gap semiconductors with great promise for optoelectronic devices. Although spatial correlation of electrons and holes plays a key role, there is little experimental information on such…

材料科学 · 物理学 2015-06-23 A. T. Hanbicki , M. Currie , G. Kioseoglou , A. L. Friedman , B. T. Jonker

Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…

应用物理 · 物理学 2019-05-24 David Maeso , Andres Castellanos-Gomez , Nicolas Agraït , Gabino Rubio-Bollinger

The electronic structure of an atomic-layer-deposited MoS2 monolayer on SiO2 was investigated using X-ray absorption spectroscopy (XAS) and synchrotron X-ray photoelectron spectroscopy (XPS). The angle-dependent evolution of the XAS spectra…

Near-field optical microscopy can be used as a viable route to understand the nanoscale material properties below the diffraction limit. On the other hand, atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are the…

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band structure engineering. Since electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and…

Two-dimensional crystals, single sheets of layered materials, often show distinct properties desired for optoelectronic applications, such as larger and direct band gaps, valley- and spinorbit effects. Being atomically thin, the low amount…

材料科学 · 物理学 2018-11-14 Roman Kempt , Agnieszka Kuc , Jae Hyo Han , Jinwoo Cheon , Thomas Heine

Using density functional theory, the electronic structures of single walled molybdenum disulfide nanotubes (MoS$_2$ NTs) were investigated as a function of diameter. Our calculations show that the electronic structure near the band gap is…

材料科学 · 物理学 2021-05-12 Kaoru Hisama , Mina Maruyama , Shohei Chiashi , Shigeo Maruyama , Susumu Okada

Molybdenum disulfide (MoS2) of single and few-layer thickness was exfoliated on SiO2/Si substrate and characterized by Raman spectroscopy. The number of S-Mo-S layers of the samples was independently determined by contact-mode atomic-force…

材料科学 · 物理学 2010-11-16 Changgu Lee , Hugen Yan , Louis E. Brus , Tony F. Heinz , James Hone , Sunmin Ryu

Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in…

Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed…

介观与纳米尺度物理 · 物理学 2018-01-18 Y. M. Jaques , P. Manimunda , Y. Nakanishi , S. Susarla , C. F. Woellner , S. Bhowmick , S. A. S. Asif , D. S. Galvão , C. S. Tiwary , P. M. Ajayan

Monolayers of transition-metal dichalcogenides (TMDs) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can…

材料科学 · 物理学 2021-03-10 Nourdine Zibouche , Martin Schlipf , Feliciano Giustino

This study presents a comprehensive first-principles investigation of the structural, electronic and optical properties of monolayer \ch{Mo_{1-x}W_xS2} alloys, systematically exploring the full compositional range ($x=0$ to $1$) using…

It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two…

Topological materials ranging from topological insulators to semimetals host many novel quantum phenomena including quantum spin Hall effect and topological Fermi arcs. Transitions between these topological phases have attracted much…

介观与纳米尺度物理 · 物理学 2026-04-21 Changcang Qiao , Chen-Chia Hsu , Tao Zhang , Zhiming Sun , Dong Qian , Yang-hao Chan , Peng Chen

Monolayer transition metal dichalcogenides have emerged as promising materials for optoelectronic and nanophotonic devices. However, the low photoluminescence (PL) quantum yield (QY) hinders their various potential applications. Here we…

The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective…

Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that…