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相关论文: Magnetic transition in a correlated band insulator

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A simple effective model for a description of magnetically ordered insulators is analysed. The tight binding Hamiltonian consists of the effective on-site interaction (U) and intersite magnetic exchange interactions (Jz, Jxy) between…

强关联电子 · 物理学 2012-05-01 Waldemar Kłobus , Konrad Kapcia , Stanisław Robaszkiewicz

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

Magnetic field (H) effects on a correlated electron system with the spin-state degree of freedom are examined. The effective Hamiltonian derived from the two-orbital Hubbard model is analyzed by the mean-field approximation. Applying H to…

强关联电子 · 物理学 2016-08-04 Taro Tatsuno , Eriko Mizoguchi , Joji Nasu , Makoto Naka , Sumio Ishihara

Motivated by the discovery of high-temperature superconductivity in bilayer nickelate La$_3$Ni$_2$O$_7$ under pressure, we investigate the ground-state phase diagram and correlation effects using determinant quantum Monte Carlo simulations…

强关联电子 · 物理学 2025-02-07 Jian-Jian Yang , Dao-Xin Yao , Han-Qing Wu

We report the emergence or broadening of exotic magnetic metallic phases upon explicit breaking of $SU(2)$ symmetry by introduction of mass imbalance in a variant of Hubbard model, known as the ionic Hubbard model in the presence of…

强关联电子 · 物理学 2021-01-21 Anwesha Chattopadhyay

We derive an effective Hamiltonian $H_{eff}$ for an ionic Hubbard chain, valid for $t\ll U,\Delta $, where $t$ is the hopping, $U$ the Coulomb repulsion, and $\Delta$ the charge transfer energy. $H_{eff}$ is the minimal model for describing…

强关联电子 · 物理学 2009-11-10 C. D. Batista , A. A. Aligia

We explore the ground-state properties of a one-dimensional model with two orbitals per site, where, in addition to atomic energies $\pm M$, intra- and inter-orbital hoppings, the intra-orbital Hubbard ($U$) and nearest-neighbor…

强关联电子 · 物理学 2025-04-07 Roberta Favata , Davide Piccioni , Alberto Parola , Federico Becca

The Lieb lattice possesses three bands and with intrinsic spin orbit coupling $\lambda$, supports topologically non-trivial band insulating phases. At half filling the lower band is fully filled, while the upper band is empty. The chemical…

强关联电子 · 物理学 2019-07-31 Sayan Jana , Arijit Saha , Anamitra Mukherjee

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

The interplay between electronic correlations and band topology is a central theme in modern condensed matter physics. In this work, we investigate the effects of on-site Hubbard interactions on the topological, magnetic, and quantum…

强关联电子 · 物理学 2025-10-01 Abdiel de Jesús Espinosa-Champo , Gerardo G. Naumis

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using…

强关联电子 · 物理学 2009-11-07 H. Fehske , A. P. Kampf , M. Sekania , G. Wellein

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet

We study the Hubbard-Holstein model, which includes both the electron-electron and electron-phonon interactions characterized by $U$ and $g$, respectively, employing the dynamical mean-field theory combined with Wilson's numerical…

强关联电子 · 物理学 2009-11-10 Gun Sang Jeon , Tae-Ho Park , Jung Hoon Han , Hyun C. Lee , Han-Yong Choi

We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer…

强关联电子 · 物理学 2016-05-10 Jason Iaconis , Hiroaki Ishizuka , D. N. Sheng , Leon Balents

We provide analytical and numerical solution of the two band fermion model with on-site Coulomb at half filling. In limiting cases for generate bands and one flat band, the model reduces to the Hubbard and Falicov-Kimball models,…

强关联电子 · 物理学 2020-10-27 Igor N. Karnaukhov

We study the conditions to realize an excitonic condensed phase in an electron-hole bilayer system with local Hubbard-like interactions at half-filling, where we can address the interplay with Mott localization. Using Dynamical Mean-Field…

强关联电子 · 物理学 2025-12-15 Samuele Giuli , Adriano Amaricci , Massimo Capone

The Mott-Hubbard metal-insulator transition in the paramagnetic phase of the one-band Hubbard model has long been used to describe similar features in real materials like V$_2$O$_3$. Here we show that this transition is hidden inside a…

强关联电子 · 物理学 2009-11-10 R. Zitzler , N. Tong , Th. Pruschke , R. Bulla

A simple effective model of charge ordered and (or) magnetically ordered insulators is studied. The tight binding Hamiltonian analyzed consists of (i) the effective on-site interaction U, (ii) the intersite density-density interaction W and…

强关联电子 · 物理学 2023-07-19 Konrad Kapcia , Waldemar Kłobus , Stanisław Robaszkiewicz