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相关论文: Magnetic transition in a correlated band insulator

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Correlated states emerge in low-dimensional systems owing to enhanced Coulomb interactions. Elucidating these states requires atomic scale characterization and delicate control capabilities. In this study, spectroscopic imaging-scanning…

We study the general phase diagram of correlated electrons for iridium-based (Ir) compounds on the hyperhoneycomb lattice---a crystal structure where the Ir$^{4+}$ ions form a three-dimensional network with three-fold coordination recently…

强关联电子 · 物理学 2014-06-11 Eric Kin-Ho Lee , Subhro Bhattacharjee , Kyusung Hwang , Heung-Sik Kim , Hosub Jin , Yong Baek Kim

The slave boson mean-field studies of the ground state of the Hubbard model with correlated hopping were performed. The approach qualitatively recovers the exact results for the case of the hopping integral t equal to the correlated hopping…

超导电性 · 物理学 2009-10-30 Bogdan R. Bulka

We study a two-species bosonic Hubbard model on a two-dimensional square lattice by means of quantum Monte Carlo simulations. In addition to the usual contact repulsive interactions between the particles, the Hamiltonian has an…

量子气体 · 物理学 2012-05-22 L. de Forges de Parny , F. Hébert , V. G. Rousseau , R. T. Scalettar , G. G. Batrouni

Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the…

强关联电子 · 物理学 2020-04-22 Wanying Chen , Yonghuan Chu , Tongyun Huang , Tianxing Ma

Cooperation and competition between the antiferromagnetic, d-wave superconducting and Mott-insulating states are explored for the two-dimensional Hubbard model including nearest and next-nearest-neighbor hoppings at zero temperature. Using…

强关联电子 · 物理学 2007-12-11 M. Aichhorn , E. Arrigoni , M. Potthoff , W. Hanke

The Hubbard on-site repulsion $U$ between opposite spin electrons on the same atomic orbital is widely regarded to be the most important source of electronic correlation in solids. Here we extend the Hubbard model to account for the fact…

强关联电子 · 物理学 2009-11-07 J. E. Hirsch

Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…

强关联电子 · 物理学 2007-05-23 M. Potthoff

The ground state for the half-filled $t-t'$ Hubbard model is treated within the Hartree-Fock approximation and the slave boson approach including correlations. The criterium for the metal-insulator transition in the Slater scenario is…

强关联电子 · 物理学 2021-07-14 P. A. Igoshev , V. Yu. Irkhin

Motivated by the recent progress in engineering artificial non-Abelian gauge fields for ultracold fermions in optical lattices, we investigate the time-reversal-invariant Hofstadter-Hubbard model. We include an additional staggered lattice…

For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is observed by inducing internal optical phonon-coupled holes…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Two-dimensional density-matrix renormalization group method is employed to examine the ground state phase diagram of the Hubbard model on the triangular lattice at half filling. The calculation reveals two discontinuities in the double…

强关联电子 · 物理学 2017-11-20 Tomonori Shirakawa , Takami Tohyama , Jure Kokalj , Shigetoshi Sota , Seiji Yunoki

We study how the Mott metal-insulator transition (MIT) is influenced when we deal with electrons with different angular momenta. For lithium we found an essential effect when we include $p$-orbitals in the description of the Hilbert space.…

强关联电子 · 物理学 2009-11-10 Walter Alsheimer , Beate Paulus

We analyze the effects of the local Coulomb interaction on a topological band insulator (TBI) by applying the dynamical mean field theory to a generalized Bernevig-Hughes-Zhang model having electron correlations. It is elucidated how the…

强关联电子 · 物理学 2012-09-20 Tsuneya Yoshida , Satoshi Fujimoto , Norio Kawakami

We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modelled by a Hubbard Hamiltonian similar to that used for the kappa-(BEDT-TTF)(2)X…

强关联电子 · 物理学 2009-11-07 Olivier Cepas , Ross H. McKenzie

A slave boson representation for the degenerate Hubbard model is introduced. The location of the metal to insulator transition that occurs at commensurate densities is shown to depend weakly on the band degeneracy M. The relative weights of…

强关联电子 · 物理学 2016-08-31 Raymond Fresard , Gabriel Kotliar

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych

We investigate the half-filled Hubbard model with spatially alternating interactions by means of the two-site dynamical mean-field theory. It is found that a single Mott transition occurs when two kinds of interactions are increased. This…

强关联电子 · 物理学 2012-04-20 Takamitsu Saitou , Akihisa Koga , Atsushi Yamamoto

Within the framework of a mean-field approach the Mott-Hubbard phase transition is considered in the Hubbard and Falicov-Kimball models for half-filled occupation. It is shown that a static Z_2-field forms an insulator state on the lattice…

强关联电子 · 物理学 2022-05-25 Igor N. Karnaukhov

We develop a theory of the correlated magnetically ordered insulating state at the edge of a two-dimensional topological insulator. We demonstrate that the gapped spin-polarized state, induced by the application of the magnetic field $B$,…

强关联电子 · 物理学 2015-03-13 Maxim Kharitonov
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