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相关论文: Magnetic transition in a correlated band insulator

200 篇论文

The possibility of "orbitally selective Mott transitions" within a multiband Hubbard model, in which one orbital with large on-site electron-electron repulsion $U_1$ is insulating and another orbital, to which it is hybridized, with small…

强关联电子 · 物理学 2022-09-15 Yuxi Zhang , Chunhan Feng , Rubem Mondaini , George G. Batrouni , Richard T. Scalettar

The Hubbard model in the strong-coupling regime is mainly studied by Kondo-lattice theory or 1/d expansion theory, with d the spatial dimensionality. In two dimensions and higher, the ground state within the Hilbert subspace with no order…

强关联电子 · 物理学 2007-07-03 Fusayoshi J. Ohkawa

We present studies of the atomic limit of the extended Hubbard model with pair hopping for arbitrary electron density and arbitrary chemical potential. The Hamiltonian consists of (i) the effective on-site interaction $U$ and (ii) the…

强关联电子 · 物理学 2014-11-04 Konrad Kapcia

We study the behavior of fermion liquid defined on hexagonal and triangular lattices with short-range repulsion at half filling. In strong coupling limit the Mott-Hubbard phase state is present, the main peculiarity of insulator state is a…

强关联电子 · 物理学 2021-09-17 Igor N. Karnaukhov , Kateryna Levchuk , Igor N. Dubinski

Under the influence of an external magnetic field and spin-changing collisions, the band insulator (BI) state of one-dimensional (1D) s-wave repulsively interacting 4-component fermions at half-filling transforms into Mott insulator (MI)…

量子气体 · 物理学 2013-11-05 J. Jaramillo , S. Greschner , T. Vekua

The metal--insulator transition (MIT) for the square, simple cubic, and body-centered cubic lattices is investigated within the $t-t'$ Hubbard model at half-filling by using both the Hartree-Fock approximation (HFA) generalized for the case…

强关联电子 · 物理学 2016-11-03 M. A. Timirgazin , P. A. Igoshev , A. K. Arzhnikov , V. Yu. Irkhin

We re-examine the band structure of the stripe charge ordered state of $\alpha$-(BEDT-TTF)$_2$I$_3$ under pressure by using an extended Hubbard model within the Hartree mean-field theory. By increasing pressure, we find a topological…

介观与纳米尺度物理 · 物理学 2015-05-28 A. Kobayashi , Y. Suzumura , F. Piéchon , G. Montambaux

We investigate the magnetotransport properties of the one-band Hubbard-Holstein model at half-filling in three dimensions (3D) using exact diagonalization based semi-classical Monte Carlo simulations with phonons treated in the adiabatic…

强关联电子 · 物理学 2026-04-21 Sandip Halder , Moshe Schechter

The variational cluster approximation is used to study the isotropic triangular-lattice Hubbard model at half filling, taking into account the nearest-neighbor ($t_1$) and next-nearest-neighbor ($t_2$) hopping parameters for magnetic…

强关联电子 · 物理学 2017-02-28 Kazuma Misumi , Tatsuya Kaneko , Yukinori Ohta

We investigate the ionic Hubbard model (IHM) at half-filling in the limit of strong correlations and large ionic potential. The low energy effective Hamiltonian in this limit, obtained by a similarity transformation, is a modified $t-J$…

强关联电子 · 物理学 2019-04-24 Anwesha Chattopadhyay , Soumen Bag , H. R. Krishnamurthy , Arti Garg

Nonlinear response of a Mott insulator to external electric field, corresponding to dielectric breakdown phenomenon, is studied within of a one-dimensional half-filled Hubbard model. It is shown that in the limit of nearly spin polarized…

强关联电子 · 物理学 2012-05-11 Zala Lenarčič , Peter Prelovšek

We study the magnetic field driven metal-to-insulator transition in half-filled Hubbard model on the Bethe lattice, using the dynamical mean-field theory by solving the quantum impurity problem with density-matrix renormalization group…

强关联电子 · 物理学 2017-09-13 W. Zhu , D. N. Sheng , Jian-Xin Zhu

Motivated by recent experiments of a novel 5$d$ Mott insulator in Sr$_2$IrO$_4$, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling $\lambda$. The variational Monte Carlo method is used to obtain the…

强关联电子 · 物理学 2010-11-25 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

We study the Hubbard model on a bilayer with repulsive on-site interactions, $U$, in which fermions undergo both intra-plane ($t$) and inter-plane ($t_z$) hopping. This situation is what one would expect in high-temperature superconductors…

凝聚态物理 · 物理学 2016-08-31 Raimundo R dos Santos

In this paper, we studied a generalized Bose-Hubbard model on a checkerboard lattice with topologically nontrivial flat-band. We used mean-field method to decouple the model Hamiltonian and obtained phase diagram by Landau theory of…

量子气体 · 物理学 2015-06-05 Xing-Hai Zhang , Su-Peng Kou

The one-dimensional extended Peierls-Hubbard model is studied at several band fillings using the density matrix renormalization group method. Results show that the ground state evolves from a Mott-Peierls insulator with a correlation gap at…

强关联电子 · 物理学 2009-10-30 Eric Jeckelmann

The magnetic properties and Mott transition of the Hubbard model on the square lattice with frustration are studied at half-filling and zero temperature by the variational cluster approximation. When the on-site repulsion $U$ is large,…

强关联电子 · 物理学 2015-06-15 A. Yamada , K. Seki , R. Eder , Y. Ohta

We revisit the ground-state phase diagram of the one-dimensional half-filled extended Hubbard model with on-site (U) and nearest-neighbor (V) repulsive interactions. In the first half of the paper, using the weak-coupling…

强关联电子 · 物理学 2007-05-23 M. Tsuchiizu , A. Furusaki

Employing extensive cellular dynamical mean-field theory (CDMFT) calculations with exact diagonalization impurity solver, we investigate the ground state phase diagrams and non-magnetic metal-insulator transitions of the half-filled Hubbard…

强关联电子 · 物理学 2015-03-20 Han-Qing Wu , Rong-Qiang He , Zi Yang Meng , Zhong-Yi Lu

We study antiferromagnetism and single-particle properties in the two-dimensional half-filled Hubbard model at low temperature. Collective spin fluctuations are governed by a non-linear sigma model that we derive from the Hubbard model for…

强关联电子 · 物理学 2007-05-23 K. Borejsza , N. Dupuis