相关论文: Magnetic transition in a correlated band insulator
We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…
The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson…
We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…
We investigate the role of short-ranged electron-electron interactions in a paradigmatic model of three dimensional topological insulators, using dynamical mean-field theory and focusing on non magnetically ordered solutions. The…
The effects of Hubbard-type on-site interactions on the BHZ model is studied in this paper for model parameters appropriate for the HgTe/CdTe quantum well. Within a simple mean field theory we search for plausible magnetic instabilities in…
The ground state properties of a paramagnetic Mott insulator are investigated in the presence of an external electrical field using the inhomogeneous Gutzwiller approximation for a single band Hubbard model in a slab geometry. The metal…
We analyze the effects of the on-site Coulomb repulsion U on a band insulator using dynamical mean field theory (DMFT). We find the surprising result that the gap is suppressed to zero at a critical Uc1 and remains zero within a metallic…
We study the photo-excitation dynamics of correlated band insulators, using non-equilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction $U$ and…
The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…
We employ the dynamical mean field approximation to study the effects of ionic potential ($\Delta$) on the square lattice Hubbard model. At half-filling when the staggered potential ($\Delta$) dominates the on-site Hubbard interaction…
We study the ground state of the Hubbard model on a square lattice with two degenerate orbitals per site and at integer fillings as a function of onsite Hubbard repulsion $U$ and Hund's intra-atomic exchange coupling $J$. We use a…
We study by dynamical mean field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band…
We use synchrotron x-ray diffraction and electrical transport under pressure to probe both the magnetism and the structure of single crystal NiS2 across its Mott-Hubbard transition. In the insulator, the low-temperature antiferromagnetic…
To understand the essence of the exciton Mott transition in three-dimensional electron-hole systems, the metal-insulator transition is studied for a two-band Hubbard model in infinite dimensions with interactions of electron-electron…
We report a detailed study of a model Hamiltonian which exhibits a rich interplay of geometrical spin frustration, strong electronic correlations, and charge ordering. The character of the insulating phase depends on the magnitude of…
A one-dimensional model of interacting electrons with on-site $U$, nearest-neighbor $V$, and correlated-hopping interaction $T^{\ast}$ is studied at half-filling using the continuum-limit field theory approach. The ground state phase…
In the ionic Hubbard model, the onsite repulsion $U$, which drives a Mott insulator and the ionic potential $V$, which drives a band insulator, compete with each other to open up a window of charge fluctuations when $U \sim V$. We study…
Within the framework of a realistic multi-band p-d-model, we derived an effective Hamiltonian to describe the exchange interaction effects near the spin crossover in magnetic Mott-Hubbard insulators under pressure. It is shown that…
Using the nonlocal coherent-potential approximation we study the effect of intersite spatial correlations on the transition from band insulator to metal as well as from metal to Mott insulator in the "alloy analogy" approach to the…
The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…