中文
相关论文

相关论文: Magnetic transition in a correlated band insulator

200 篇论文

We consider the Bose-Hubbard model on a two-leg ladder under an artificial magnetic field, and investigate the superfluid-to-Mott insulator transition in this setting. Recently, this system has been experimentally realized [M.Atala…

量子气体 · 物理学 2015-02-03 Ahmet Keleş , M. Ö. Oktel

We solve the Periodic Anderson model in the Mott-Hubbard regime, using Dynamical Mean Field Theory. Upon electron doping of the Mott insulator, a metal-insulator transition occurs which is qualitatively similar to that of the single band…

强关联电子 · 物理学 2009-11-13 G. Sordi , A. Amaricci , M. J. Rozenberg

The interplay between topology and electronic correlation effects offers a rich avenue for discovering emergent quantum phenomena in condensed matter systems. In this work, starting from the Weyl-Hubbard model, we investigate the quantum…

强关联电子 · 物理学 2024-02-16 Snehasish Nandy , Christopher Lane , Jian-Xin Zhu

We present the analysis of paramagnetic effects of magnetic field ($B$) (Zeeman term) in the zero-bandwidth limit of the extended Hubbard model for arbitrary chemical potential $\mu$ and electron density $n$. The effective Hamiltonian…

强关联电子 · 物理学 2014-12-09 Konrad Jerzy Kapcia

We present the influence of spin correlation on the metal-insulator transitions (MIT) in two-orbital Hubbard models by the Kotliar-Ruckenstein slave-boson approach. In the asymmetric half-filling situation, the two orbits simultaneously…

强关联电子 · 物理学 2015-03-19 Ya-Min Quan , Liang-Jian Zou , Hai-Qing Lin

We describe a general method to study the ground state phase diagram of electronic models on chains whose extended Hubbard hamiltonian is formed by a generalized permutator plus a band-controlling term. The method, based on the appropriate…

强关联电子 · 物理学 2009-10-31 F. Dolcini , A. Montorsi

Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…

强关联电子 · 物理学 2007-05-23 Tsuyoshi Kashima , Masatoshi Imada

We determine the quantum phase diagram of the one-dimensional Hubbard model with bond-charge interaction X in addition to the usual Coulomb repulsion U at half-filling. For large enough X and positive U the model shows three phases. For…

We investigate the metal-insulator Mott transition in a generalized version of the periodic Anderson model, in which a band of itinerant electrons is hybridrized with a narrow and strongly correlated band. Using dynamical mean-field theory,…

强关联电子 · 物理学 2017-07-18 Adriano Amaricci , Luca de' Medici , Massimo Capone

The metal-insulator transition in VO2 was investigated using the three-band Hubbard model, in which the degeneracy of the 3d orbitals, the on-site Coulomb and exchange interactions, and the effects of lattice distortion were considered. A…

凝聚态物理 · 物理学 2009-11-10 Arata Tanaka

The checkerboard lattice, with alternating 'crossed' plaquettes, serves as the two dimensional analog of the pyrochlore lattice. The corner sharing plaquette structure leads to a hugely degenerate ground state, and no magnetic order, for…

强关联电子 · 物理学 2017-01-24 Nyayabanta Swain , Pinaki Majumdar

Recently, the field of strongly correlated electrons has begun an intense search for a correlation induced topological insulating phase. An example is the quadratic band touching point which arises in a checkerboard lattice at half-filling,…

强关联电子 · 物理学 2019-03-28 I. Mandal , S. Gemsheim

We analyze the role of spatial electronic correlations and, in particular, of the magnetic fluctuations in Mott insulators. A half-filled Hubbard model is solved at large strength of the repulsion U on a two-dimensional square lattice using…

强关联电子 · 物理学 2024-02-19 Evgeny A. Stepanov , Maria Chatzieleftheriou , Niklas Wagner , Giorgio Sangiovanni

Within the ionic Hubbard model, electron correlations transmute the single-particle gap of a band insulator into a Mott gap in the strong correlation limit. However understanding the nature of possible phases in between these two extreme…

强关联电子 · 物理学 2018-11-13 Tohid Farajollahpour , S. A. Jafari

The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion, and hopping t. A critical line V_c(U) approximately equal to…

强关联电子 · 物理学 2009-11-07 Eric Jeckelmann

The paramagnetic phase diagrams of the half-filled Hubbard model on a twisted bilayer square lattice are investigated using coherent potential approximation. Besides the conventional metallic, band insulating, and Mott insulating phases, we…

强关联电子 · 物理学 2024-04-09 Xiu-Cai Jiang , Ze Ruan , Yu-Zhong Zhang

A repulsive Hubbard model with both spin-asymmetric hopping (${t_\uparrow\neq t_\downarrow}$) and a staggered potential (of strength $\Delta$) is studied in one dimension. The model is a compound of the mass-imbalanced (${t_\uparrow\neq…

强关联电子 · 物理学 2017-07-14 Michael Sekania , Dionys Baeriswyl , Luka Jibuti , George I. Japaridze

The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

We study the ground state phase diagram of the Anderson-Hubbard model with correlated hopping at half filling in one-dimension. The Hamiltonian has a local Coulomb repulsion $U$ and a disorder potential with local energies randomly…

强关联电子 · 物理学 2017-07-19 Francesca Battista , Alberto Camjayi , Liliana Arrachea

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno