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相关论文: Tuning hole mobility in InP nanowires

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The transport in double-barrier heterostructures of electrons interacting with longitudinal optical phonons in the presence of parallel electric and magnetic fields is analyzed theoretically with the aid of a 3-dimensional quantum transport…

介观与纳米尺度物理 · 物理学 2009-11-07 Dae Kwan Kim , Patrick Roblin , Kwang-Sup Soh , Chul Koo Kim

The effect of electron-phonon coupling on the current noise in a molecular junction is investigated within a simple model. The model comprises a 1-level bridge representing a molecular level that connects between two free electron…

介观与纳米尺度物理 · 物理学 2007-05-23 Michael Galperin , Abraham Nitzan , Mark A. Ratner

Helical states can be measured through the observation of the reentrant behaviour, which is a dip in the conductance probed in semiconducting nanowires (NWs) with strong spin-orbit coupling (SOC) under the presence of an external…

介观与纳米尺度物理 · 物理学 2022-01-05 Iann Cunha , Leonardo Villegas-Lelovsky , Leonardo Kleber Castelano

Electronic transport in a model molecular device coupled to local phonon modes is theoretically analyzed. The method allows for obtaining an accurate approximation of the system's quantum state irrespective of the electron and phonon energy…

介观与纳米尺度物理 · 物理学 2007-10-10 Antonino La Magna , Ioannis Deretzis

The intrinsic charge transport of stanene is investigated by using density function theory and density function perturbation theory coupled with Boltzmann transport equations from first principles. The accurate Wannier interpolations are…

化学物理 · 物理学 2018-01-11 Yuma Nakamura , Tianqi Zhao , Jinyang Xi , Wen Shi , Dong Wang , Zhigang Shuai

Here we present a theoretical analysis of the effect of inelastic electron scattering on spin-dependent transport characteristics (conductance, current-voltage dependence, magnetoresistance, shot noise spectrum, Fano factor) for magnetic…

介观与纳米尺度物理 · 物理学 2007-05-23 Kamil Walczak

We investigate the valence intraband transitions in p-doped self-assembled InAs quantum dots using far-infrared magneto-optical technique with polarized radiation. We show that a purely electronic model is unable to account for the…

We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping ($\sim$10$^{13}$ cm$^{-2}$) due to hexagonal…

材料科学 · 物理学 2019-11-01 A. V. Lugovskoi , M. I. Katsnelson , A. N. Rudenko

Utilizing atomistic lattice dynamics and scattering theory, we study thermal transport in nanodevices made of 10 nm thick silicon nanowires, from 10 to 100 nm long, sandwiched between two bulk reservoirs. We find that thermal transport in…

材料科学 · 物理学 2013-05-08 Ivan Duchemin , Davide Donadio

We study arrays of parallel doped semiconductor nanowires in a temperature range where the electrons propagate through the nanowires by phonon assisted hops between localized states. By solving the Random Resistor Network problem, we…

介观与纳米尺度物理 · 物理学 2015-05-13 Riccardo Bosisio , Cosimo Gorini , Geneviève Fleury , Jean-Louis Pichard

Scaling of semiconductor devices has reached a stage where it has become absolutely imperative to consider the quantum mechanical aspects of transport in these ultra small devices. In these simulations, often one excludes a rigorous band…

介观与纳米尺度物理 · 物理学 2008-01-08 D. Basu , M. J. Gilbert , L. F. Register , S. K. Banerjee

Electron-phonon coupling can strongly affect the eigenmodes of nano- and micromechanical resonators. We study the effect of the coupling for $p$-doped semiconductor resonators. We show that the backaction from the strain-induced…

介观与纳米尺度物理 · 物理学 2025-02-17 Ankang Liu , Mark Dykman

We study transport properties of the helical edge states of two-dimensional integer and fractional topological insulators via double constrictions. Such constrictions couple the upper and lower edges of the sample, and can be made and tuned…

强关联电子 · 物理学 2013-09-25 Chia-Wei Huang , Sam T. Carr , Dmitri Gutman , Efrat Shimshoni , Alexander D. Mirlin

Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its low hole mobility. In order to address this challenge, here…

材料科学 · 物理学 2019-09-04 Samuel Poncé , Debdeep Jena , Feliciano Giustino

The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole…

材料科学 · 物理学 2015-06-25 Daniel Errandonea , J. F. Sánchez-Royo , A. Segura , A. Chevy , L. Roa

Understanding the impact of the alloy micro-structure on carrier transport becomes important when designing III-nitride-based LED structures. In this work, we study the impact of alloy fluctuations on the hole carrier transport in (In,Ga)N…

介观与纳米尺度物理 · 物理学 2021-11-03 Michael O'Donovan , Patricio Farrell , Timo Streckenbach , Thomas Koprucki , Stefan Schulz

We study the thermopower of a disordered nanowire in the field effect transistor configuration. After a first paper devoted to the elastic coherent regime (Bosisio R., Fleury G. and Pichard J.-L. 2014 \textit{New J. Phys.} \textbf{16}…

介观与纳米尺度物理 · 物理学 2014-09-23 Riccardo Bosisio , Cosimo Gorini , Geneviève Fleury , Jean-Louis Pichard

We have performed a comprehensive computational study of the vibrational properties and electron-phonon couplings in the three known polymorphs of pentacene. Vibrational patterns and electron-phonon interactions were calculated at several…

材料科学 · 物理学 2025-07-08 Luca Gnoli , Elisabetta Venuti , Matteo Masino , Patrizio Graziosi

Heat transport in bulk materials is well described using the Debye theory of 3D vibrational modes (phonons) and the acoustic match model. However, in cryogenic nanodevices, phonon wavelengths exceed device dimensions, leading to confinement…

介观与纳米尺度物理 · 物理学 2024-10-14 M. Sidorova , A. D. Semenov , A. Zaccone , I. Charaev , M. Gonzalez , A. Schilling , S. Gyger , S. Steinhauer

To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of…

介观与纳米尺度物理 · 物理学 2019-07-24 Samuel James Bader , Reet Chaudhuri , Martin Schubert , Han Wui Then , Huili Grace Xing , Debdeep Jena