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相关论文: Tuning hole mobility in InP nanowires

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A time-dependent inelastic electron transport theory for strong electron-phonon interaction is established via the equations of motion method combined with the small polaron transformation. In this work, the dissipation via electron-phonon…

介观与纳米尺度物理 · 物理学 2015-05-21 Yu Zhang , ChiYung Yam , GuanHua Chen

Nanophononics is essential for the engineering of thermal transport in nanostructured electronic devices, it greatly facilitates the manipulation of mechanical resonators in the quantum regime, and could unveil a new route in quantum…

We explore polaronic quantum transport in three-dimensional models of disordered organic crystals with strong coupling between electronic and vibrational degrees of freedom. By studying the polaron dynamics in a static disorder environment,…

材料科学 · 物理学 2015-06-03 Frank Ortmann , Stephan Roche

By applying an unrestriced Hartree-Fock approximation and a Random Phase approximation to multiband Peierls-Hubbard Hamiltonians, we determine the phonon mode structure in models of transition metal oxides in the presence of intrinsic…

强关联电子 · 物理学 2009-09-29 I. Martin , R. J. McQueeney , A. R. Bishop , Z. G. Yu

The conductance through a molecular device including electron-electron and electron-phonon interactions is calculated using the Numerical Renormalization Group method. At low temperatures and weak electron-phonon coupling the properties of…

强关联电子 · 物理学 2007-05-23 P. S. Cornaglia , H. Ness , D. R. Grempel

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge impurity induced localized states are measured at low-carrier…

介观与纳米尺度物理 · 物理学 2017-11-22 Gen Long , Shuigang Xu , Xiangbin Cai , Zefei Wu , Tianyi Han , Jiangxiazi Lin , Yuanwei Wang , Liheng An , Yuan Cai , Xinran Wang , Ning Wang

General expressions for the electron- and hole-acoustical-phonon deformation potential Hamiltonian (H_{E-DP}) are derived for the case of Ge/Si and Si/Ge core/shell nanowire structures (NWs) with circular cross section. Based on the…

介观与纳米尺度物理 · 物理学 2017-09-08 Darío G. Santiago-Pérez , C. Trallero-Giner , G. E. Marques

Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…

介观与纳米尺度物理 · 物理学 2009-11-13 Neophytos Neophytou , Abhijeet Paul , Gerhard Klimeck

We report on a theoretical study of inelastic quantum transport in $(3m,0)$ carbon nanotubes. By using a many-body description of the electron-phonon interaction in Fock space, a novel mechanism involving optical phonon emission…

介观与纳米尺度物理 · 物理学 2007-05-23 L. E. F. Foa Torres , S. Roche

The discrete nature of the vibrational modes of an isolated nanometer-scale solid dramatically modifies its low-energy electron and phonon dynamics from that of a bulk crystal. However, nanocrystals are usually coupled--even if only…

介观与纳米尺度物理 · 物理学 2009-11-07 Kelly R. Patton , Michael R. Geller

Understanding phonon transport properties in defect-laden AlN is important for their device applications. Here, we construct a machine-learning potential to describe phonon transport with $ab$ $initio$ accuracy in pristine and defect-laden…

材料科学 · 物理学 2024-09-25 Ying Dou , Koji Shimizu , Jesús Carrete , Hiroshi Fujioka , Satoshi Watanabe

It has been shown in recent experiments that electronic transport through a gold monatomic nanowire is dissipative above a threshold voltage due to excitation of phonons via the electron-phonon interaction. We address that data by…

材料科学 · 物理学 2009-11-07 F. Picaud , A. Dal Corso , E. Tosatti

We have investigated the main scattering mechanisms affecting mobility in graphene nanoribbons using detailed atomistic simulations. We have considered carrier scattering due to acoustic and optical phonons, edge roughness, single defects,…

介观与纳米尺度物理 · 物理学 2011-03-03 Alessandro Betti , Gianluca Fiori , Giuseppe Iannaccone

While the vibrational thermodynamics of materials with small anharmonicity at low temperatures has been understood well based on the harmonic phonons approximation; at high temperatures, this understanding must accommodate how phonons…

材料科学 · 物理学 2015-10-20 Tian Lan

Inspired by Holstein's work on small polaron hopping, the evolution equations of localized states and extended states in presence of atomic vibrations are derived for an amorphous semiconductor. The transition probabilities are obtained for…

材料科学 · 物理学 2009-06-11 Ming-Liang Zhang , D. A. Drabold

A few-layer black phosphorene has recently gained significant interest in the scientific community. In this paper, we consider several polymorphs of phosphorene nanoribbons (PNRs) and employ deformation potential theory within the effective…

材料科学 · 物理学 2018-02-08 Sumandeep Kaur , Ashok Kumar , Sunita Srivastava , Ravindra Pandey , K. Tankeshwar

We study the impact of phonon anharmonicity on the electronic dynamics of soft materials using a nonperturbative quantum-classical approach. The method is applied to a one-dimensional model of doped organic semiconductors with low-frequency…

材料科学 · 物理学 2025-09-24 Jonathan H. Fetherolf , Petra Shih , Timothy C. Berkelbach

We calculate the Hall transport in a multiband systems with a dominant interband interaction between carriers having electron and hole character. We show that this situation gives rise to an unconventional scenario, beyond the Boltzmann…

强关联电子 · 物理学 2012-08-28 L. Fanfarillo , E. Cappelluti , C. Castellani , L. Benfatto

To interpret recent experimental observations of the phononless hopping conduction, we suggest a novel transport mechanism according to which the current-carrying single electrons move via quantum resonant tunneling between localized states…

凝聚态物理 · 物理学 2007-05-23 S. D. Baranovskii , I. S. Shlimak

We provide a topological understanding on phonon Hall effect in dielectrics with Raman spinphonon coupling. A general expression for phonon Hall conductivity is obtained in terms of the Berry curvature of band structures. We find a…

材料科学 · 物理学 2011-01-28 Lifa Zhang , Jie Ren , Jian-Sheng Wang , Baowen Li