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Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$.…

Topological insulators are new class of quantum materials, which have insulating energy gaps in bulk, but exhibit gapless edge states or surface states that are protected by time-reversal symmetry at boundary. It was theoretically predicted…

介观与纳米尺度物理 · 物理学 2018-03-07 G. H. Cao , H. J. Liu , J. H. Liang , L. Cheng , D. D. Fan , Z. Y. Zhang

Topological insulators are new states of quantum matter with surface states protected by the time-reversal symmetry. In this work, we perform first-principle electronic structure calculations for $Sb_2Te_3$, $Sb_2Se_3$, $Bi_2Te_3$ and…

介观与纳米尺度物理 · 物理学 2008-12-10 Haijun Zhang , Chao-Xing Liu , Xiao-Liang Qi , Xi Dai , Zhong Fang , Shou-Cheng Zhang

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…

介观与纳米尺度物理 · 物理学 2015-11-12 Weiguang Ye , A. B. Pakhomov , Shuigang Xu , Huanhuan Lu , Zefei Wu , Yu Han , Tianyi Han , Yingying Wu , Gen Long , Jiangxiazi Lin , Gu Xu , Yuan Cai , Lu-Tao Weng , Ning Wang

The phase transition from a topological insulator to a trivial band insulator is studied by angle-resoled photoemission spectroscopy on Bi$_{2-x}$In$_{x}$Se$_{3}$ single crystals. We first report the complete evolution of the bulk band…

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states…

介观与纳米尺度物理 · 物理学 2016-11-28 Y. Hung Liu , C. Wei Chong , W. Chuan Chen , J. C. A. Huang , C. -Maw Cheng , K. -Ding Tsuei , Z. Li , H. Qiu , V. V. Marchenkov

Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…

High quality thin films of the topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission…

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard…

材料科学 · 物理学 2015-08-17 C. E. ViolBarbosa , Chandra Shekhar , Binghai Yan , S. Ouardi , G. H. Fecher , C. Felser

The topological insulators represent a unique state of matter where the bulk is insulating with an energy gap while the surface is metallic with a Dirac cone protected by the time reversal symmetry. These characteristics provide a venue to…

Using time- and angle-resolved photoemission, we investigate the ultrafast response of excited electrons in the ternary topological insulator (Bi$_{1 x}$Sb$_{x}$)$_2$Te$_3$ to fs-infrared pulses. We demonstrate that at the critical…

介观与纳米尺度物理 · 物理学 2017-05-22 J. Sánchez-Barriga , M. Battiato , E. Golias , A. Varykhalov , L. V. Yashina , O. Kornilov , O. Rader

Topological insulators in the Bi2Se3 family have an energy gap in the bulk and a gapless surface state consisting of a single Dirac cone. Low frequency optical absorption due to the surface state is universally determined by the fine…

材料科学 · 物理学 2015-03-17 Xiao Zhang , Jing Wang , Shou-Cheng Zhang

We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi$_2$Te$_3$. By using angle-resolved photoemission, we were able to show that the…

材料科学 · 物理学 2017-04-04 Katharina Höfer , Christoph Becker , Steffen Wirth , Liu Hao Tjeng

Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these…

强关联电子 · 物理学 2013-07-04 Z. -H. Pan , E. Vescovo , A. V. Fedorov , G. D. Gu , T. Valla

We report direct imaging of standing waves of the nontrivial surface states of topological insulator Bi$_2$Te$_3$ by using a low temperature scanning tunneling microscope. The interference fringes are caused by the scattering of the…

介观与纳米尺度物理 · 物理学 2015-05-14 Tong Zhang , Peng Cheng , Xi Chen , Jin-Feng Jia , Xucun Ma , Ke He , Lili Wang , Haijun Zhang , Xi Dai , Zhong Fang , Xincheng Xie , Qi-Kun Xue

The interface between a superconductor and a topological insulator has been proposed to harbor novel quasiparticles that realize physical schemes for fault-tolerant quantum computation. Here, we present high resolution angle-resolved…

介观与纳米尺度物理 · 物理学 2009-10-08 Y. Xia , L. Wray , D. Qian , D. Hsieh , A. Pal , H. Lin , A. Bansil , D. Grauer , Y. S. Hor , R. J. Cava , M. Z. Hasan

Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these…

强关联电子 · 物理学 2013-01-09 Z. -H. Pan , A. V. Fedorov , D. Gardner , Y. S. Lee , S. Chu , T. Valla
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