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The evolution of InAs quantum dots grown on InP substrates by metal-organic vapour phase epitaxy is studied as a function of InAs coverage. Under specific growth conditions, the onset of the two- to three-dimensional transition is seen to…
The quantum states of an ellipsoidal nanocluster of a heterophase system InAs / GaAs are studied using an exact analytical approach, in contrast to the generally accepted theoretical model based on the adiabatic approximation. It is shown…
This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam…
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II transitions were observed in the Bi containing W QWs and the…
Atomically-resolved Z-contrast and strain mappings are used to extract a model of the composition of an InGaAs/InAlAs asymmetric coupled quantum-well structure grown on InP using metal-organic vapor phase epitaxy. The model accounts for…
We present a detailed experimental optical study supported by theoretical modeling of InAs quantum dots (QDs) embedded in an InAlGaAs barrier lattice-matched to InP(001) grown with the use of a ripening step in molecular beam epitaxy. The…
The dynamics of excitonic energy transfer in molecular complexes triggered by interaction with laser pulses offers a unique window into the underlying physical processes. The absorbed energy moves through the network of interlinked pigments…
Quantum light is considered to be one of the key resources of the coming second quantum revolution expected to give rise to groundbreaking technologies and applications. If the spatio-temporal and polarization structure of modes is known,…
A quantum-mechanical formulation of energy transfer between closely spaced surfaces is given. Coupling between the two surfaces arises from the atomic dipole-dipole interaction involving transverse-photon exchange. The exchange of photons…
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and…
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band…
We theoretically investigate up-conversion process of entangled two photons on a dimer molecule, which is coupled by a cavity or nanoscale metallic structure. Within one-dimensional input-output theory, the propagators of the photons are…
We study ground-state quantum entanglement in the one-dimensional Bose-Hubbard model in the presence of a harmonic trap. We focus on two transitions that occur upon increasing the characteristic particle density: the formation of a…
Ultrathin topological insulator membranes are building blocks of exotic quantum matter. However, traditional epitaxy of these materials does not facilitate stacking in arbitrary orders, while mechanical exfoliation from bulk crystals is…
By combining band gap engineering with the self-organized growth of quantum dots, we present a scheme of adjusting the mid-infrared absorption properties to desired energy transitions in quantum dot based photodetectors. Embedding the self…
While ubiquitous, energy redistribution remains a poorly understood facet of the nonequilibrium thermodynamics of biomolecules. At the molecular level, finite-size effects, pronounced nonlinearities, and ballistic processes produce behavior…
The primary mechanism of optical memristive devices relies on the phase transitions between amorphous-crystalline states. The slow or energy hungry amorphous-crystalline transitions in optical phase-change materials are detrimental to the…
Shape transformations of partially capped self-assembled InAs quantum dots grown on InP are studied. Atomic force microscopy images show large anisotropic redistribution of the island material after coverage by a 1 nm thick InP layer. The…
Continuum simulations of self-organized lateral compositional modulation growth in InAs/AlAs short-period superlattices on InP substrate are presented. Results of the simulations correspond quantitatively to the results of synchrotron x-ray…
Ultrafast photoexcitation offers a novel approach to manipulating quantum materials. One of the long-standing goals in this field is to achieve optical control over topological properties. However, the impact on their electronic structures,…