New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

Pablo Alonso-Gonzalez; Luisa González; Yolanda González; David Fuster; Iván FernándezMartínez; Javier Martín-Sanchez; Leon Abelmann

doi:10.1088/0957-4484/18/35/355302

New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

Materials Science 2025-01-24 v1 Mesoscale and Nanoscale Physics

Authors: Pablo Alonso-Gonzalez , Luisa González , Yolanda González , David Fuster , Iván FernándezMartínez , Javier Martín-Sanchez , Leon Abelmann

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Abstract

This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

Keywords

quantum dots semiconductor nanowire growth optics and photonics

Cite

@article{arxiv.2501.13438,
  title  = {New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates},
  author = {Pablo Alonso-Gonzalez and Luisa González and Yolanda González and David Fuster and Iván FernándezMartínez and Javier Martín-Sanchez and Leon Abelmann},
  journal= {arXiv preprint arXiv:2501.13438},
  year   = {2025}
}

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7 pages, 4 figures

New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

Abstract

Keywords

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