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相关论文: Hillock formation of Pt thin films on Yttria stabi…

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During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads…

介观与纳米尺度物理 · 物理学 2013-04-17 Henning Galinski , Thomas Ryll , Philipp Reibisch , Lukas Schlagenhauf , Iwan Schenker , Ludwig J. Gauckler

The morphological evolution of hillocks at the unpassivated sidewalls of the single crystal metallic thin films is investigated via computer simulations by using the free-moving boundary value problem. The effects of the drift-diffusion…

材料科学 · 物理学 2009-10-27 Tarik Omer Ogurtani , Aytac Celik , Emre Ersin Oren

Highly porous Pt/Al thin film electrodes on yttria stabilized zirconia electrolytes were prepared by dealloying of co-sputtered Pt/Al films. The oxygen reduction capability of the resulting electrodes was analyzed in a solid oxide fuel cell…

Platinum, Silver-Platinum embedded Zirconia (Pt/Ag-Pt ZrO2) thin films have been fabricated on silicon wafers and glass substrates using the plasma co-sputtering method. Zirconia thin films are of significant technological importance due to…

Magnetron sputtering has also been used to deposit thin films of some materials and it has significant technological importance. A modeling on deposition of epitaxial thin films of Yttrium Stabilized Zirconia (YSZ) was done the diffusion of…

材料科学 · 物理学 2016-11-24 A. S Bhattacharyya , P. Prabhakar , R. P. Kumar , S. Sharma , S. K. Raj , R. Ratn , P. Kommu

To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST…

A continuum dynamical model is developed to determine the morphological and compositional instabilities on the free surface of heteroepitaxial alloy films in the absence of growth. We use linear stability analysis to study the early…

统计力学 · 物理学 2009-11-07 Zhi-Feng Huang , Rashmi C. Desai

We have studied zirconia films on a Rh(111) substrate with thicknesses in the range of 2-10 monolayers (ML) using scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Zirconia was deposited using a UHV-compatible…

材料科学 · 物理学 2018-12-05 Peter Lackner , Zhiyu Zou , Sabrina Mayr , Joong-Il Jake Choi , Ulrike Diebold , Michael Schmid

We present an extensive study on the effect of substrate orientation, strain, stoichiometry and defects on spin ice physics in Ho$_2$Ti$_2$O$_7$ thin films grown onto yttria-stabilized-zirconia substrates. We find that growth in different…

The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is…

材料科学 · 物理学 2016-08-02 Yang Li , Jing Wan , Detlef-M. Smilgies , Nicole Bouffard , Richard Sun , Randall L. Headrick

Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution…

The successful commercialization of flexible spintronic devices requires a complete understanding of the impact of external strain on the structural, electronic, and magnetic properties of a system. The impact of bending-induced strain on…

Dense and mesoporous 4% mol Yttria-stabilized zirconia thin films were deposited on amorphous silica substrates. The effects of the temperature on the mesostructure were analyzed, by applying different thermal treatments to the samples…

It is demonstrated here that growth stress has a substantial effect on the dielectric constant of zirconia thin films. The correct combination of parameters - phase, texture and stress - is shown to yield films with high dielectric constant…

Ferroelectric memories experienced a revival in the last decade due to the discovery of ferroelectricity in HfO$_2$-based nanometer-thick thin films. These films exhibit exceptional silicon compatibility, overcoming the scaling and…

材料科学 · 物理学 2024-08-27 Tianyuan Zhu , Shiqing Deng , Shi Liu

Entropy stabilization has garnered significant attention as a new approach to designing novel materials. Much of the work in this area has focused on bulk ceramic processing, leaving entropy-stabilized thin films relatively underexplored.…

材料科学 · 物理学 2020-06-29 Valerie Jacobson , Dave Diercks , Bobby To , Andriy Zakutayev , Geoff Brennecka

Thin Ba0.5Sr0.5TiO3 (BST) films on p-type Si (100) using The Chemical Solution Deposition (CSD) method. X-ray diffraction (XRD), Scanning electron microscopy (SEM), C-V meter analysis measurement were employed to characterise the films. The…

凝聚态物理 · 物理学 2007-05-23 Irzaman , H. Darmasetiawan , M. Nur Indro S. G. Sukaryo , M Hikam , Na Peng Bo , M. Barmawi

The evolution in the surface morphology of epitaxial graphene films and 6H-SiC(0001) substrates is studied by electron channeling contrast imaging. Whereas film thickness is determined by growth temperature only, increasing growth times at…

材料科学 · 物理学 2009-11-13 Nicola Ferralis , Jason Kawasaki , Roya Maboudian , Carlo Carraro

A hydrostatically stressed soft elastic film circumvents the imposed constraint by undergoing a morphological instability, the wavelength of which is dictated by the minimization of the surface and the elastic strain energies of the film.…

软凝聚态物质 · 物理学 2015-08-07 Manoj K. Chaudhury , Aditi Chakrabarti , Animangsu Ghatak

Lead based relaxor ferroelectric thin films have been of technological importance due to excellent properties for several commercial applications. However subtleness and high cost of fabrication have plagued of these materials. In this work…

材料科学 · 物理学 2015-12-29 T. Garg , A. R. Kulkarni , N. Venkataramani
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