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We report the temperature dependent electrical transport properties of gated bilayer graphene devices. We see a clear evidence of insulating behavior due to electron-hole charge puddles. The electrical resistivity increases while the…

材料科学 · 物理学 2015-06-12 Kalon Gopinadhan , Young Jun Shin , Hyunsoo Yang

We investigate bilayer graphene transport in the presence of electron-hole puddles induced by long-range charged impurities in the environment. We explain the insulating behavior observed in the temperature dependent conductivity of low…

介观与纳米尺度物理 · 物理学 2010-08-24 E. H. Hwang , S. Das Sarma

We consider a graphene sheet in the vicinity of a substrate, which contains charged impurities. An analytic expression for the probability distribution function of voltage fluctuations due to the charged impurities is derived. The…

介观与纳米尺度物理 · 物理学 2008-01-14 Victor Galitski , Shaffique Adam , S. Das Sarma

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the…

介观与纳米尺度物理 · 物理学 2011-09-28 Qiuzi Li , E. H. Hwang , S. Das Sarma

The experimentally observed metal-to-insulator transition in hydrogenated graphene is numerically confirmed for actual sized graphene samples and realistic impurity concentrations. The eigenstates of our tight-binding model with…

强关联电子 · 物理学 2012-02-13 Gerald Schubert , Holger Fehske

Thermodynamic properties of quasiparticles in a graphene-based structures are investigated. Two graphene superconducting layers (one superconducting component is placed on the top layeredgraphene structure and the other component in the…

介观与纳米尺度物理 · 物理学 2011-10-26 Dima Bolmatov

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…

材料科学 · 物理学 2007-12-29 F. T. Vasko , V. Ryzhii

It is widely believed that carrier-density inhomogeneities ("electron-hole puddles") in single-layer graphene on a substrate like quartz are due to charged impurities located close to the graphene sheet. Here we demonstrate by using a…

介观与纳米尺度物理 · 物理学 2012-05-18 Marco Gibertini , Andrea Tomadin , Francisco Guinea , Mikhail I. Katsnelson , Marco Polini

Three-dimensional topological insulators harbour metallic surface states with exotic properties. In transport or optics, these properties are typically masked by defect-induced bulk carriers. Compensation of donors and acceptors reduces the…

介观与纳米尺度物理 · 物理学 2016-06-29 N. Borgwardt , J. Lux , I. Vergara , Zhiwei Wang , A. A. Taskin , Kouji Segawa , P. H. M. van Loosdrecht , Yoichi Ando , A. Rosch , M. Grüninger

The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while…

介观与纳米尺度物理 · 物理学 2015-05-13 Wenjuan Zhu , Vasili Perebeinos , Marcus Freitag , Phaedon Avouris

Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…

介观与纳米尺度物理 · 物理学 2020-07-01 Mohammad Zarenia , Shaffique Adam , Giovanni Vignale

We report on the temperature dependent electron transport in graphene at different carrier densities $n$. Employing an electrolytic gate, we demonstrate that $n$ can be adjusted up to 4$\times10^{14}$cm$^{-2}$ for both electrons and holes.…

介观与纳米尺度物理 · 物理学 2010-12-14 Dmitri K. Efetov , Philip Kim

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the…

介观与纳米尺度物理 · 物理学 2011-12-07 Shaffique Adam , Suyong Jung , Nikolai N. Klimov , Nikolai B. Zhitenev , Joseph A. Stroscio , M. D. Stiles

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…

介观与纳米尺度物理 · 物理学 2015-05-27 Dionisis Berdebes , Tony Low , Yang Sui , Joerg Appenzeller , Mark Lundstrom

We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the…

介观与纳米尺度物理 · 物理学 2014-10-29 Michael Knap , Jay D. Sau , Bertrand I. Halperin , Eugene Demler

We propose a hydrodynamic model describing steady-state and dynamic electron and hole transport properties of graphene structures which accounts for the features of the electron and hole spectra. It is intended for electron-hole plasma in…

介观与纳米尺度物理 · 物理学 2015-06-03 D. Svintsov , V. Vyurkov , S. Yurchenko , T. Otsuji , V. Ryzhii

We study the probability distribution of the resistance, or equivalently the charge transmission, of a decoherent quantum Hall-superconductor edge, with the decoherence coming from metallic puddles along the edge. Such metallic puddles may…

介观与纳米尺度物理 · 物理学 2024-05-29 Yichen Hu , Jing Wang , Biao Lian

We propose two coupled electron-hole sheets of few-layer graphene as a new nanostructure to observe superfluidity at enhanced densities and enhanced transition temperatures. For ABC stacked few-layer graphene we show that the strongly…

超导电性 · 物理学 2014-12-10 M. Zarenia , A. Perali , D. Neilson , F. M. Peeters

We investigate the contribution of charge puddles to the non-vanishing conductivity minimum in disordered graphene flakes at the charge neutrality point. For that purpose, we study systems with a geometry that suppresses the transmission…

介观与纳米尺度物理 · 物理学 2016-01-13 Leandro R. F. Lima , Caio H. Lewenkopf

We study theoretically an influence of the near-interfacial insulator traps and electron-hole puddles on the small-signal capacitance and conductance characteristics of the gated graphene structures. Based on the self-consistent…

介观与纳米尺度物理 · 物理学 2011-06-29 G. I. Zebrev , E. V. Melnik , A. A. Tselykovskiy
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