相关论文: Tensile-Strained Germanium-on-Insulator Substrate …
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been great deal of progress in hyperdoping of Ga doped Ge using ion…
While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…
Super capacitors are promising energy storage devices due to their capability of delivering high peak current and storing high amount of energy in a short time with very low internal power loss. We fabricated the graphene or graphite oxide…
An unconventional approach to enhance the transverse thermopower by combining magnetic and thermoelectric materials, namely the Seebeck-driven transverse thermoelectric generation (STTG), has been proposed and demonstrated recently. Here,…
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN surface has been a critical restriction that hinders the…
The combination of graphene with silicon in hybrid devices has attracted attention extensively over the last decade. Most of such devices were proposed for photonics and radiofrequency applications. In this work, we present a unique…
Integrated waveguide polarizers and polarization-selective micro-ring resonators (MRRs) incorporated with graphene oxide (GO) films are experimentally demonstrated. CMOS-compatible doped silica waveguides and MRRs with both uniformly coated…
The Geiger photodiodes, or single photon avalanche photodiodes, for a radiation tolerant solid-state photomultiplier (SSPM) are being designed using Aluminum Gallium Arsenide (AlGaAs) and are less than 1 micrometer thick. Studies on the…
We present here an optomechanical system fabricated with novel stress management techniques that allow us to suspend an ultrathin defect-free silicon photonic-crystal membrane above a Silicon-on-Insulator (SOI) substrate with a gap that is…
Germanium-Tin is emerging as a material exhibiting excellent photonic properties. Here we demonstrate optical initialization and readout of spins in this intriguing group IV semiconductor alloy and report on spin quantum beats between…
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, free-space communication, and spectroscopy. To this end,…
Multijunction solar cells are usually grown on Ge substrates. This implies several disadvantages that hinder the performance of the whole multijunction and limit their possible applications. The drawbacks caused by the substrate are:…
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile…
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…
We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon…
Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the…
Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The…
We demonstrate theoretically that interface engineering can drive Germanium, one of the most commonly-used semiconductors, into topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical…