相关论文: Tensile-Strained Germanium-on-Insulator Substrate …
In this study, novel flexible micro-scale humidity sensors were directly fabricated in graphene oxide (GO) and polyimide (PI) using ion beam writing without any further modifications, and then successfully tested in an atmospheric chamber.…
The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to…
We report enhanced nonlinear optics in integrated nanophotonic chips through the use of integrated with 2D graphene oxide (GO) films. We investigate nanophotonic platforms including silicon, silicon nitride and high index doped silica. Due…
Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important…
We present a comprehensive study of the structural and electronic properties of ultrathin films containing graphene layers synthesized by chemical vapor deposition (CVD) based surface segregation on polycrystalline Ni foils then transferred…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
Stretchable electronics capable of conforming to nonplanar and dynamic human body surfaces are central for creating implantable and on-skin devices for high-fidelity monitoring of diverse physiological signals. While various strategies have…
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…
Layered 2D GO films are integrated with silicon on insulator (SOI) nanowire waveguides to experimentally demonstrate an enhanced Kerr nonlinearity, observed through selfphase modulation (SPM). The GO films are integrated with SOI nanowires…
Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and…
We report electrical measurements on hexagonal silicon-germanium (hex-SiGe), a group IV alloy with direct bandgap. Electrical contacts are formed by metal alloying and doping is achieved using ion implantation. The metastable hex-SiGe phase…
The way of reduction of metal oxyde semiconductor (MOS) structures is going to reach limitations and new devices have to be explored as an alternative to MOS technology. Molecular electronic and more particularly self-assembly-molecular…
We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO$_{2}$ with a Ga$^{+}$ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam…
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics…
A wide range of approaches have been explored to meet the challenges of graphene nanostructure fabrication, all requiring complex and high-end nanofabrication platform and suffering from surface contaminations, potentially giving electrical…
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors are based on a 0.2 {\mu}m CMOS fully depleted SOI process…
We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2…
The construction and first operation of the slow positron beam built at the Hebrew University is reported here. The beam follows a traditional design, using a 22Na source, a Tungsten moderator, and a target cell equipped with a load-lock…
Gd-rich gadolinium scandate (Gd2-xScxO3) was deposited by high-pressure sputtering on (100) silicon by alternating the deposition of lower than 0.5 nm thick films of its binary components: Sc2O3 and Gd2O3. The formation of the ternary oxide…
Spin-gapless semiconductors with their unique band structures have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have successfully deposited the thin…