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(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ alloys are non-degenerate topological insulators (TIs) whose Dirac point (DP) can be tuned within the bulk bandgap by varying the composition, effectively reducing bulk conduction while allowing surface carrier…

Topological insulators (TI) are highly attractive platforms for next-generation optoelectronic and photonic devices. Spin-momentum locking of topological surface states enhance their nonlinear optical responses and sensitivities, especially…

其他凝聚态物理 · 物理学 2026-02-03 Hamideh Sharifpour , George J. de Coster , Avik W. Ghosh

Bulk superconductivity has been discovered in Tl_{0.6}Bi_{2}Te_{3}, which is derived from the topological insulator Bi2Te3. The superconducting volume fraction of up to 95% (determined from specific heat) with Tc of 2.28 K was observed. The…

超导电性 · 物理学 2016-08-17 Zhiwei Wang , A. A. Taskin , Tobias Froelich , Markus Braden , Yoichi Ando

Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…

介观与纳米尺度物理 · 物理学 2014-05-01 Fei-Xiang Xiang , Xiao-Lin Wang , Shi-Xue Dou

Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…

材料科学 · 物理学 2019-08-12 N. Koirala , M. Salehi , J. Moon , S. Oh

We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature.…

材料科学 · 物理学 2015-06-23 J. Barzola-Quiquia , T. Lehmann , M. Stiller , D. Spemann , P. Esquinazi , P. Häussler

Based on a combination of $k \cdot p$ theory, band topology analysis and electronic structure calculations, we predict the (111) thin films of the SnTe class of three-dimensional (3D) topological crystalline insulators realize the quantum…

材料科学 · 物理学 2015-03-05 Junwei Liu , Liang Fu

Bismuth selenide (Bi2Se3) is a good topological insulator (TI) with its surface band Dirac point inside the bulk bandgap. However, Bi2Se3 films grown by molecular beam epitaxy (MBE) often require tuning of Fermi level near the Dirac point…

介观与纳米尺度物理 · 物理学 2025-09-11 Shu-Wei Wang , Hang Chi , Jui-Che Chung

Scanning tunneling spectroscopic studies of Bi2Se3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the…

介观与纳米尺度物理 · 物理学 2015-06-03 M. L. Teague , H. Chu , F. -X. Xiu , L. He , K. -L. Wang , N. -C. Yeh

Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk…

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states…

介观与纳米尺度物理 · 物理学 2016-11-28 Y. Hung Liu , C. Wei Chong , W. Chuan Chen , J. C. A. Huang , C. -Maw Cheng , K. -Ding Tsuei , Z. Li , H. Qiu , V. V. Marchenkov

Ultra-thin topological insulators provide a platform of realizing many exotic phenomena such a Quantum spin Hall effect, Quantum anomalous Hall effect, etc. These effects or states are characterized by quantized transport behavior of edge…

介观与纳米尺度物理 · 物理学 2021-08-09 Jun Zhang , Junbo Cheng , Shuaihua Ji , Yeping Jiang

Asymmetric electrical conductance is theoretically demonstrated on the surface of a topological insulator (TI) in the limit of infinitesimally small forward and reverse biases between two spin selective electrodes. The discontinuous…

介观与纳米尺度物理 · 物理学 2015-09-16 Xiaopeng Duan , Xi-Lai Li , Yuriy G. Semenov , Ki Wook Kim

Topological insulators are predicted to present novel surface transport phenomena, but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that a new topological…

材料科学 · 物理学 2015-05-20 Zhi Ren , A. A. Taskin , Satoshi Sasaki , Kouji Segawa , Yoichi Ando

We consider a thin film of a topological insulator (TI) sandwiched between two ferromagnetic (FM) layers. The system is additionally under an external gate voltage. The surface electron states of TI are magnetized due to the magnetic…

介观与纳米尺度物理 · 物理学 2023-09-19 Piotr Pigoń , Anna Dyrdał

Bi2Se3 and Bi2Te3 are layered compounds of technological importance, being excellent thermoelectric materials as well as topological insulators. We report density functional theory calculations of the atomic, electronic and thermoelectric…

材料科学 · 物理学 2013-08-08 Xin Luo , Michael B. Sullivan , Su Ying Quek

Topological insulators (TIs) are materials that have a bulk electronic band gap like an ordinary insulator but have protected conducting states on their surface. One of the most interesting properties of TIs is their spin helicity, whereby…

介观与纳米尺度物理 · 物理学 2013-07-19 Xuetao Zhu , Colin Howard , Jiandong Guo , Michael El-Batanouny

Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive.…

We investigated the electronic properties of the topological insulator Bi$_{2}$Te$_{3}$ by scanning tunneling microscopy and spectroscopy at low temperature. We obtained high-resolution quasiparticle interference data of the topological…

We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization…

介观与纳米尺度物理 · 物理学 2010-10-22 J. Chen , H. J. Qin , F. Yang , J. Liu , T. Guan , F. M. Qu , G. H. Zhang , J. R. Shi , X. C. Xie , C. L. Yang , K. H. Wu , Y. Q. Li , L. Lu
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