相关论文: Thickness-dependent bulk properties and weak anti-…
With high quality topological insulator (TI) Bi2Se3 thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ~8 QL (QL:…
We have investigated the transport properties of topological insulator Bi2Se3 thin films grown using magnetron sputtering with an emphasis on understanding the behavior as a function of thickness. We show that thickness has a strong…
Strong spin-orbit coupling in topological insulators results in the ubiquitously observed weak antilocalization feature in their magnetoresistance. Here we present magnetoresistance measurements in ultra thin films of the topological…
Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet…
Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation…
Topological insulators are immensely investigated for their surface states related properties as these materials can be used for various spintronics, quantum computing, and optoelectronics applications. In this perspective, different…
The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We…
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to…
We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an…
Three-dimensional (3-D) topological insulators (TI) are characterized by the presence of metallic surface states and a bulk band gap. Recently theoretical and experimental studies have shown an induced gap in the surface state bands of TI…
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the…
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…
We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi$_2$Se$_3$. We find: 1) two contributions of mobile charge carriers to the THz conductivity immediately after…
The massless Dirac fermions residing on the surface of three-dimensional topological insulators are protected from backscattering and cannot be localized by disorder, but such protection can be lifted in ultrathin films when the…
While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3, a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such…
Although over the past number of years there have been many advances in the materials aspects of topological insulators (TI), one of the ongoing challenges with these materials is the protection of them against aging. In particular, the…
An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We…
We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…