相关论文: Wafer-scale graphene/ferroelectric hybrid devices …

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…

I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…

We have fabricated n-layer graphene field effect transistors on epitaxial ferroelectric Pb(Zr_0.2Ti_0.8)O_3 (PZT) thin films. At low gate voltages, PZT behaves as a high-k dielectric with k up to 100. An unusual resistance hysteresis occurs…

Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5.…

The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…

Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree,…

The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2 V), negligible hysteresis, current…

We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We…

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The…

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal…

Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…

Recent experiments on ferroelectric gating have introduced a novel functionality, i.e. nonvolatility, in graphene field effect transistors. A comprehensive understanding in the non-linear, hysteretic ferroelectric gating and an effective…

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions…

Conventional field effect transistor operation in graphene is limited by its zero gap and minimum quantum conductivity. In this work, we report on controlled electrochemical modification of graphene such that its conductance changes by more…

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other…

The possibility of modulation of mid-IR radiation by low voltage gated single/multilayer graphene on Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate was demonstrated theoretically. The depth of modulation for 5 layer graphene for the range of…

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…

The field effect transistors (FETs) exhibited ultrahigh responsivity (107 A/W) to infrared light with great improvement of mobility in graphene / PbS quantum dot (QD) hybrid. These reported transistors are either unipolar or depletion mode…