相关论文: Capacitance-voltage profiling techniques for chara…
Capacitance-voltage ($\textit{C-V}$) traces in n-type-(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage from positive to negative values, the system…
Capacitance-voltage (CV) measurements are a widely used technique in silicon detector physics. It gives direct information about the full depletion voltage and the effective doping concentration. However, for highly irradiated sensors, the…
Since the discovery of high-Tc cuprate superconductivity in 1986 many new experimental techniques and theoretical concepts have been developed. In particular it was shown that the BCS theory of d-wave superconductivity describes…
Quantum characterization, verification, and validation (QCVV) is a set of techniques to probe, describe, and assess the behavior of quantum bits (qubits), quantum information-processing registers, and quantum computers. QCVV protocols probe…
Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a…
A novel time-domain technique for supercapacitor characterization is developed, modeled numerically, and experimentally tested on a number of commercial supercapacitors. The method involves momentarily shorting a supercapacitor for a brief…
Capacitance measurements are crucial for probing the electrical properties of materials. In this study, we develop and implement a capacitance measurement technique optimized for pulsed magnetic fields. Our approach employs an…
Capacitance measurements from cyclic voltammetry, galvanostatic chronopotentiometry and calculation of capacitance from imaginary part of impedance are widely used in investigations of supercapacitors. The methods assume the supercapacitor…
Capacitors are typically connected together in one of two configurations: either in series, or in parallel. Here we study a capacitor-within-capacitor (CWC). Simulations and experiments indicate that the overall capacitance of the…
Defect-assisted recombination processes are critical to understand, as they frequently limit photovoltaic (PV) device performance. However, the physical parameters governing these processes can be extremely challenging to measure, requiring…
This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…
A novel inverse relaxation technique for supercapacitor characterization is developed, modeled numerically, and experimentally tested on a number of commercial supercapacitors. It consists in shorting a supercapacitor for a short time…
Photocurrent-voltage characteristic (PC-V) is a method of determining the critical parameter in X-ray and gamma-ray detector plates, i.e., the carrier mobility - lifetime product, mt. We show on the (Cd,Mn)Te samples that the measurement…
A class of Actively Calibrated Line Mounted Capacitive Voltage Transducers (LMCVT) are introduced as a viable line mountable instrumentation option for deploying large numbers of voltage transducers onto the medium and high voltage systems.…
The equation describing the capacitance of capacitors is determined. It is shown that by optimizing the material of the conducting electrodes, the capacitance of capacitors reaching the quantum regime can be substantially enhanced or…
Capacitance measurement is a useful technique in studying quantum devices, as it directly probes the local particle charging properties, i.e. the system compressibility. Here we report one approach which can measure capacitance from mK to…
We report a charge based model to establish the analytical equation, describing the nature of capacitance-voltage ($C$-$V$) characteristics of organic solar cells under dark condition (or organic diodes) over a wide range of voltage,…
The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured…
Based on the Gauss law for the electric field, a new integral formula is deduced together with one of its possible applications, in the area of semiconductor junctions, specifically an analytical formula for the built-in potential of…
The capacitance of capacitive energy storage devices can not be directly measured, but can be estimated from the input and output signals expressed in the time or frequency domains. Here the time-domain voltage-charge relationship in…