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Elastic constants c11, c12 and c44 of degenerately doped silicon are studied experimentally as a function of the doping level and temperature. First and second order temperature coefficients of the elastic constants are extracted from…

材料科学 · 物理学 2014-07-09 Antti Jaakkola , Mika Prunnila , Tuomas Pensala , James Dekker , Panu Pekko

We report wide-doping-range ($8 \times 10^{17}$ to $4 \times 10^{20}$ cm$^{-3}$ Hall electron density) low temperature specific heat measurements on single crystal SrTiO$_3$:Nb, correlated with electronic transport data and tight-binding…

强关联电子 · 物理学 2019-02-20 E. McCalla , M. N. Gastiasoro , G. Cassuto , R. M. Fernandes , C. Leighton

High-purity cubic silicon carbide possesses the second-highest thermal conductivity among large-scale crystals, surpassed only by diamond, making it crucial for practical applications of thermal management. Recent theoretical studies…

材料科学 · 物理学 2024-09-30 Zifeng Huang , Yunfan Yang , Da Sheng , Hui Li , Yuxiang Wang , Zixuan Sun , Ming Li , Runsheng Wang , Ru Huang , Zhe Cheng

The temperature dependence of the low-temperature dielectric response is studied in o-TaS$_3$ samples doped by Nb, Se, and Ni and for nominally pure ones. It is found, that the low-temperature dielectric constant depends anomalously on…

强关联电子 · 物理学 2009-10-31 N. I. Baklanov , S. V. Zaitsev-Zotov , V. V. Frolov , P. Monceau

The effect of nanoscale-SiC doping of MgB2 was investigated using transport and magnetic measurements. It was found that there is a clear correlation between the critical temperature Tc, the resistivity r, the residual resistivity ratio,…

超导电性 · 物理学 2009-11-10 S. X. Dou , V. Braccini , S. Soltanian , R. Klie , Y. Zhu , S. Li , X. L. Wang , D. Larbalestier

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures…

Measurements of the low-frequency (f<= 100 kHz) permittivity at T<= 160 K and dc resistivity (T<= 430 K) are reported for La(1-x)Ca(x)MnO(3) (0<= x<= 0.15). Static dielectric constants are determined from the low-T limiting behavior of the…

强关联电子 · 物理学 2009-11-11 K. P. Neupane , J. L. Cohn , H. Terashita , J. J. Neumeier

We investigated the influence of doping antiferromagnetic MnN in polycrystalline MnN/CoFe exchange bias systems, showing high exchange bias of up to 1800 Oe at room temperature. The thermal stability of those systems is limited by nitrogen…

材料科学 · 物理学 2021-12-08 Mareike Dunz , Björn Büker , Markus Meinert

We present a detailed room temperature x-ray powder diffraction study on La2-xSrxNiO4+d with 0<=x<=0.12 and 0<=d<=0.13. For x=0.02, 0.04 and 0.06 the oxygen content phase diagrams of the Sr doped samples show a similar sequence of pure…

超导电性 · 物理学 2009-11-10 M. Huecker , K. Chung , M. Chand , T. Vogt , J. M. Tranquada , D. J. Buttrey

Recent reports reveal that isothermal chemical doping of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this…

材料科学 · 物理学 2024-05-16 Ronald Warzoha , Brian Donovan , Yifei Sun , Elena Cimpoiasu , Shriram Ramanathan

A comprehensive study of the effects of carbohydrate doping on the superconductivity of MgB2 has been conducted. In accordance with the dual reaction model, more carbon substitution is achieved at lower sintering temperature. As the…

超导电性 · 物理学 2009-11-13 J. H. Kim , S. X. Dou , Sangjun Oh , M. Jercinovic , E. Babic , T. Nakane , H. Kumakura

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time…

材料科学 · 物理学 2015-05-20 Bilal Gokce , David E. Aspnes , Gerald Lucovsky , Kenan Gundogdu

The doping dependence of the critical current density, $J_{c}$, was measured in a series of high quality c-axis oriented ${\rm Bi_2Sr_2CaCu_2O_{8+\delta}}$ thin films. For each doping level we measured the temperature dependence of $J_{c}$.…

超导电性 · 物理学 2015-06-23 Muntaser Naamneh , Juan Carlos Campuzano , Amit Kanigel

The low-temperature specific heat of La_{2-x}Sr_xCuO_4 (LSCO) single crystals in magnetic field H up to 12 T has been examined over a wide range of doping (0.063=< p =<0.238). From this we have mapped the upper critical field H_{c2} of LSCO…

超导电性 · 物理学 2009-11-13 Yue Wang , Hai-Hu Wen

The upper critical field ($H_{c2}$) in superconducting BaFe$_{2-x}$Ni$_{x}$As$_2$ single crystals has been determined by magnetotransport measurements down to 0.6 K over the whole superconducting dome with $0.065 \leqslant x \leqslant…

The doping and temperature dependence of the electronic Raman response in cuprate superconductors is studied within the framework of the kinetic energy driven superconducting mechanism for the t-J model. It is shown that the temperature…

超导电性 · 物理学 2010-11-15 Zhihao Geng , Shiping Feng

The doping dependence of the themopower, in-plane resistivity rho_ab(T), out-of-plane resistivity rho_c(T), and susceptibility has been systematically measured for high-quality single crystal Bi2Sr2Ca2Cu3O10+delta. We found that the…

超导电性 · 物理学 2009-11-07 Takenori Fujii , Ichiro Terasaki , Takao Watanabe , Azusa Matsuda

Here, we have studied the temperature dependent Seebeck coefficient (S) of the NaCo$_2$O$_4$ (NCO) by using experimental and computational methods. The range of experimentally obtained S is $\sim$55 to 103 $\mu$V/K in the temperature range…

材料科学 · 物理学 2025-05-06 Rahul Raj , Sudhir K. Pandey

The dependence of the superconducting gaps in epitaxial Ba(Fe_{1-x}Co_{x})_2As_2 thin films on the nominal doping x (0.04 \leq x \leq 0.15) was studied by means of point-contact Andreev-reflection spectroscopy. The normalized conductance…

超导电性 · 物理学 2013-12-10 P. Pecchio , D. Daghero , G. A. Ummarino , F. Kurth , B. Holzapfel , K. Iida , R. S. Gonnelli

We measure the penetration depth of optimally doped and underdoped La2-xCexCuO4 in the millimeter frequency domain (4 - 7 cm-1) and for temperatures 2 K < T < 300 K. The penetration depth as function of temperature reveals significant…

超导电性 · 物理学 2009-11-10 A. V. Pronin , A. Pimenov , A. Loidl , A. Tsukada , M. Naito
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