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We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a…

In this paper, we investigate a new machine learning-based transmission strategy called progressive transmission or ProgTr. In ProgTr, there are b variables that should be transmitted using at most T channel uses. The transmitter aims to…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they…

To realize the full spectrum of advantages that the III-nitride materials system offers, the demonstration of p-channel III-nitride based devices is valuable. Authors report the first p-type field effect transistor (pFET) based on an…

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drain to obtain unipolar complementary transistors. To simulate…

We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner…

Platinum (Pt) is widely used for carrier-lifetime control in silicon power devices, yet the microscopic nonradiative recombination mechanism of the substitutional platinum ($\text{Pt}_\text{Si}$) dopant remains debated. Using…

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…

We present a description of the GBAR positron (e+) trapping apparatus, which consists of a three stage Buffer Gas Trap (BGT) followed by a High Field Penning Trap (HFT), and discuss its performance. The overall goal of the GBAR experiment…

The protected surface conduction of topological insulators is in high demand for the next generation of electronic devices. What is needed to move forward are robust settings where topological surface currents can be controlled by simple…

This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin…

We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH…

Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…

Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…

Ultrafast excitation of non-equilibrium carriers under intense pulses offer unique opportunities for controlling optical properties of semiconductor materials. In this work, we propose a scheme for ultrafast generation of surface plasmon…

Positrons are accumulated within a Penning trap designed to make more precise measurements of the positron and electron magnetic moments. The retractable radioactive source used is weak enough to require no license for handling radioactive…

In this paper, we present experimental results and simulation data of an electrostatically doped and therefore voltage-programmable, planar, CMOS-compatible field-effect transistor (FET) structure. This planar device is based on our…

From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field…

Most detector systems used for positron emission particle tracking (PEPT) are very expensive due to the use of inorganic plastic scintillators combined with a high number of readout electronic channels. This work aims to reduce the overall…