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Electrical generation and detection of pure spin currents without the need of magnetic materials are key elements for the realization of full electrically controlled spintronic devices. In this framework, achieving a large spin-to-charge…

A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…

Surface plasmon (SP) excitation in intense laser interaction with solid target can be exploited for enhancing secondary emissions, in particular efficient acceleration of high charge electron bunches. Previous studies have mostly used…

The low quality factor (Q) of Single-walled carbon nanotube (SWNT) resonators has limited their sensitivity in sensing application. To this end, we employ the technique of parametric amplification by modulating the spring constant of SWNT…

We present a local and transferable machine learning approach capable of predicting the real-space density response of both molecules and periodic systems to external homogeneous electric fields. The new method, SALTER, builds on the…

Superconducting resonator parametric amplifiers achieve ultra-low-noise amplification through the nonlinear kinetic inductance of thin-film superconductors. One of the main challenges to the operation of these devices is the separation of…

Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…

Surface-enhanced Raman spectroscopy is a powerful and versatile sensing method with a detection limit down to the single molecule level. In this article, we demonstrate how topology optimization (TopOpt) can be used for designing surface…

Surface plasmon polaritons (SPPs) are coherent electromagnetic surface waves trapped on an insulator-conductor interface. The SPPs decay exponentially along the propagation due to conductor losses, restricting the SPPs propagation length to…

We investigate the memory of surface polariton (SP) via the electromagnetically induced transparency (EIT) of quantum emitters doped at the interface between a dielectric and a metamaterial. We show that, due to the strong mode confinement…

Probabilistic circuits (PCs) have become the de-facto standard for learning and inference in probabilistic modeling. We introduce Sum-Product-Attention Networks (SPAN), a new generative model that integrates probabilistic circuits with…

Spectrum multiplexer enables simultaneous transmission of multiple narrow-band IoT signals through gateway devices, thereby enhancing overall spectrum utilization. We propose a novel solution based on filter banks that offer increased…

Feasibility of the promising large intelligent surface (LIS) concept, as well as its scalability, relies on the use of low-cost hardware components, raising concerns about the effects of hardware distortion. We analyze LIS systems with…

Surface Enhanced Raman Spectroscopy (SERS) is a well-established technique for enhancing Raman signals. Recently photonic integrated circuits have been used, as an alternative to microscopy based excitation and collection, to probe SERS…

Light trapping in sub-wavelength semiconductor nanowires (NWs) offers a promising approach to simultaneously reducing material consumption and enhancing photovoltaic performance. Nevertheless, the absorption efficiency of a NW, defined by…

Avalanche photodiode (APD) has been intensively investigated as a promising candidate to replace photomultiplier tubes (PMT) for weak light detection. However, in conventional APDs, a large portion of carrier energy drawn from the electric…

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

Engineering materials to include nanoscale porosity or other nanoscale structures has become a well-established strategy for enhancing the thermoelectric performance of dielectrics. However, the approach is only considered beneficial for…

In present work a new XNOR gate using three transistors has been presented, which shows power dissipation of 550.7272$\mu$W in 0.35$\mu$m technology with supply voltage of 3.3V. Minimum level for high output of 2.05V and maximum level for…

Oxynitrides are used in a variety of applications including photocatalysts, high-k dielectrics or wear-resistant coatings and often show intriguing multi-functionality. To accelerate the co-optimization of the relevant material properties…