相关论文: Realizing high current gain PNP transistors using …
In recent years, the use of Monte Carlo (MC) simulations in the domain of Medical Physics has become a state-of-the-art technology that consumes lots of computational resources for the accurate prediction of particle interactions. The use…
By using four layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer, we demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications. An…
Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional…
Surface plasmon resonance (SPR) has been intensively studied and widely employed for light trapping and absorption enhancement. In the mid-infrared and terahertz (THz) regime, graphene supports the tunable SPR via manipulating its Fermi…
We propose a scheme to realize a lossless propagation of linear and nonlinear Airy surface polaritons (SPs) via active Raman gain (ARG). The system we suggest is a planar interface superposed by a negative index metamaterial (NIMM) and a…
Carrier multiplication (CM) describes a strong charge-carrier interaction process in semiconductor colloidal nanocrystals (NCs), wherein two band-edge excitons are simultaneously created by an absorbed photon with at least twice the bandgap…
The performance limits of the multilayer graphene nanoribbon (GNR) field-effect transistor (FET) are assessed and compared to those of monolayer GNR FET and carbon nanotube (CNT) FET. The results show that with a thin high-k gate insulator…
Increasing dampinglike spin-orbit torque (SOT) is both of fundamental importance for enabling new research into spintronics phenomena and also technologically urgent for advancing low-power spin-torque memory, logic, and oscillator devices.…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…
A semiconductor structure consisting of two coupled quantum wells embedded into the intrinsic region of a {\it p-i-n} junction is proposed to be implemented as an intermediate band solar cell with ratchet state. The localized conduction…
Spatial manipulation of current flow in graphene could be achieved through the use of a tilted pn junction. We show through numerical simulation that a pseudo-Hall effect (i.e. non-equilibrium charge and current density accumulating along…
Recent experiments on inelastic light scattering in a number of insulating cuprates [1] revealed a new excitation appearing in the case of crossed polarizations just below the optical absorption threshold. This observation suggests that…
Surface ion traps confining and manipulating tens of ion qubits have become the leading platform for quantum processors with high quantum volume. These devices employ the Quantum Charge-Coupled Device (QCCD) architecture, wherein multiple…
A superconductor-normal metal-superconductor (SNS) transistor based on superconducting microcoolers is presented. The proposed 4-terminal device consists of a long SNS Josephson junction whose N region is in addition symmetrically connected…
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…
Semiconductor nanolasers based on micro disks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last decade for on-chip light source applications. However, practical realization of low threshold,…
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound…
The high-luminosity requirement in future lepton colliders imposes a need for a high-intensity positron source. In the conventional scheme, positron beams are obtained by the conversion of bremsstrahlung photons into electron-positron pairs…
Rare-earth monopnictides have attracted much attention due to their unusual electronic and topological properties for potential device applications. Here, we study rock-salt structured lanthanum monopnictides LaX (X = P, As) by density…