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An energy gap can be opened in the electronic spectrum of graphene by lifting its sublattice symmetry. In bilayers, it is possible to open gaps as large as 0.2 eV. However, these gaps rarely lead to a highly insulating state expected for…

Moir\'e superlattices in graphene supported on various substrates have opened a new avenue to engineer graphene's electronic properties. Yet, the exact crystallographic structure on which their band structure depends remains highly debated.…

By means of the first-principles calculations combined with the tight-binding approximation, the strain-induced semiconductor-semimetal transition in graphdiyne is discovered. It is shown that the band gap of graphdiyne increases from 0.47…

材料科学 · 物理学 2017-09-13 Hui-Juan Cui , Xian-Lei Sheng , Qing-Bo Yan , Qing-Rong Zheng , Gang Su

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile…

介观与纳米尺度物理 · 物理学 2022-06-06 Paul Froeter , Parsian Moseni , Apratim Khandelwal , Xiuling Li

We study the effect of strain on the band engineering in gapped graphene subject to external sources. By applying the Floquet theory, we determine the effective Hamiltonian of electron dressed by a linearly, circularly and an elliptically…

介观与纳米尺度物理 · 物理学 2021-04-02 Hasna Chnafa , Miloud Mekkaoui , Ahmed Jellal , Abdelhadi Bahaoui

We present a new first-order approach to strain-engineering of graphene's electronic structure where no continuous displacement field $\mathbf{u}(x,y)$ is required. The approach is valid for negligible curvature. The theory is directly…

介观与纳米尺度物理 · 物理学 2013-10-15 Salvador Barraza-Lopez , Alejandro A. Pacheco Sanjuan , Zhengfei Wang , Mihajlo Vanevic

Most popular atomically thin carbon material, called graphene, has got no band gap and this particular property of graphene makes it less useful from the aspect of nanoscale transistor devices. The band gap can be introduced in the graphene…

应用物理 · 物理学 2019-11-15 Pankaj Kumar

At large commensurate angles, twisted bilayer graphene which holds even parity under sublattice exchange exhibits a tiny gap. Here, we point out a way to tune this tiny gap into a large gap. We start from comprehensive understanding of the…

介观与纳米尺度物理 · 物理学 2024-03-22 Xiu-Cai Jiang , Yi-Yuan Zhao , Yu-Zhong Zhang

We present ab initio calculations on the effect of in-plane equi-biaxial strain on the structural and electronic properties of hypothetical graphene-like GaN monolayer (ML-GaN). It was found that ML-GaN got buckled for compressive strain in…

材料科学 · 物理学 2015-04-28 Harihar Behera , Gautam Mukhopadhyay

Biaxial compression of centimetre-scale graphene, freely standing on the surface of water is studied. Within this platform, we report full stress-strain compression of graphene identifying elastic and plastic deformations. The Young's…

A moire pattern is formed when two copies of a periodic pattern are overlaid with a relative twist. We address the electronic structure of a twisted two-layer graphene system, showing that in its continuum Dirac model the moire pattern…

介观与纳米尺度物理 · 物理学 2016-07-13 R. Bistritzer , A. H. MacDonald

Opening up a band gap of the graphene and finding a suitable substrate are two challenges for constituting the nano-electronic equipment. A new two-dimensional layered crystal g-C2N (Nat. Commun. 2015, 6, 1--7) with novel electronic and…

材料科学 · 物理学 2016-08-08 Zhaoyong Guan , Jia Li , Wenhui Duan

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can…

介观与纳米尺度物理 · 物理学 2010-09-13 Seon-Myeong Choi , Seung-Hoon Jhi , Young-Woo Son

The effect of grain boundaries and wrinkles on the electrical properties of polycrystalline graphene is pronounced. Here we investigate the stitching between grains of polycrystalline graphene, specifically, overlapping of layers at the…

材料科学 · 物理学 2014-06-09 Rahul Rao , Neal Pierce , Avetik R. Harutyunyan

Novel materials are in great demand for future applications. The discovery of graphene, a one atom thick carbon layer, holds the promise for unique device architectures and functionalities exploiting unprecedented physical phenomena. The…

介观与纳米尺度物理 · 物理学 2011-01-25 M. F. Craciun , S. Russo , M. Yamamoto , S. Tarucha

The electronic band structure of graphene in the presence of spin-orbit coupling and transverse electric field is investigated from first principles using the linearized augmented plane-wave method. The spin-orbit coupling opens a gap at…

材料科学 · 物理学 2013-05-29 M. Gmitra , S. Konschuh , C. Ertler , C. Ambrosch-Draxl , J. Fabian

We study the electronic properties of rippled freestanding graphene membranes under central load from a sharp tip. To that end, we develop a gauge field theory on a honeycomb lattice valid beyond the continuum theory. Based on the proper…

介观与纳米尺度物理 · 物理学 2013-10-03 James V. Sloan , Alejandro A. Pacheco Sanjuan , Zhengfei Wang , Cedric Horvath , Salvador Barraza-Lopez

Strain in sheared dense granular material is often localized in a narrow region called shear band. Recent experiments in a modified Couette cell provided localized shear flow in the bulk away from the confining walls. The non-trivial shape…

软凝聚态物质 · 物理学 2009-11-10 T. Unger , J. Torok , J. Kertesz , D. E. Wolf

Many of the properties of graphene are tied to its lattice structure, allowing for tuning of charge carrier dynamics through mechanical strain. The graphene electro-mechanical coupling yields very large pseudomagnetic fields for small…

介观与纳米尺度物理 · 物理学 2016-01-06 Shuze Zhu , Joseph A. Stroscio , Teng Li

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

介观与纳米尺度物理 · 物理学 2010-04-29 Eduardo V. Castro , N. M. R. Peres , J. M. B. Lopes dos Santos , F. Guinea , A. H. Castro Neto