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We exploit the concept of strain-induced band structure engineering in graphene through the calculation of its electronic properties under uniaxial, shear, and combined uniaxial-shear deformations. We show that by combining shear…

介观与纳米尺度物理 · 物理学 2010-06-24 Giulio Cocco , Emiliano Cadelano , Luciano Colombo

In their first-principles calculations of the electronic band structure of graphene under uniaxial strain, Gui, Li, and Zhong [Phys. Rev. B \textbf{78}, 075435 (2008)] have found opening of band gaps at the Fermi level. This finding is in…

材料科学 · 物理学 2009-10-26 M. Farjam , H. Rafii-Tabar

Graphene was deposited on a transparent and flexible substrate and tensile strain up to ~0.8% was loaded by stretching the substrate in one direction. Raman spectra of strained graphene show significant redshifts of 2D and G band (-27.8…

材料科学 · 物理学 2008-10-21 Zhen Hua Ni , Ting Yu , Yun Hao Lu , Ying Ying Wang , Yuan Ping Feng , Ze Xiang Shen

We study the vibrational properties of graphene under combined shear and uniaxial tensile strain using density-functional perturbation theory. Shear strain always causes rippling instabilities with strain-dependent direction and wavelength;…

材料科学 · 物理学 2015-07-14 Giulio Cocco , Vincenzo Fiorentini

We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the…

材料科学 · 物理学 2012-08-17 B. Verberck , B. Partoens , F. M. Peeters , B. Trauzettel

We analyze the effect of tensional strain in the electronic structure of graphene. In the absence of electron-electron interactions, within linear elasticity theory, and a tight-binding approach, we observe that strain can generate a bulk…

材料科学 · 物理学 2009-07-15 Vitor M. Pereira , A. H. Castro Neto , N. M. R. Peres

Lacking a band gap largely limits the application of graphene in electronic devices. Previous study shows that grain boundaries (GBs) in polycrystalline graphene can dramatically alter the electrical properties of graphene. Here, we…

材料科学 · 物理学 2013-01-11 Jiangtao Wu , Xinghua Shi , Yujie Wei

We induced periodic biaxial tensile strain in polycrystalline graphene by wrapping it over a substrate with repeating pillar-like structures with a periodicity of 600 nm. Using Raman spectroscopy, we determined to have introduced biaxial…

Using ab-initio methods, we show that the uniform deformation either leaves graphene (semi)metallic or opens up a small gap yet only beyond the mechanical breaking point of the graphene, contrary to claims in the literature based on…

介观与纳米尺度物理 · 物理学 2015-05-27 I. I. Naumov , A. M. Bratkovsky

We study the effect of uniaxial strain on the electronic band structure of gapped graphene. We consider two types of gapped graphene, one which breaks the symmetry between the two triangular sublattices (staggered model), and another which…

介观与纳米尺度物理 · 物理学 2010-05-11 M. Farjam , H. Rafii-Tabar

Chirality is one of the key features governing the electronic properties of single- and bilayer graphene: the basics of this concept and its consequences on transport are presented in this review. By breaking the inversion symmetry, a band…

We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of the strain modulus and direction,…

介观与纳米尺度物理 · 物理学 2010-01-04 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

The band structures of strained graphene nanoribbons (GNRs) are examined by a tight binding Hamiltonian that is directly related to the type and strength of strains. Compared to the two-dimensional graphene whose band gap remains close to…

介观与纳米尺度物理 · 物理学 2010-01-20 Yang Lu , Jing Guo

The low-energy electronic properties of strained graphene are usually obtained by transforming the bond vectors according to the Cauchy-Born rule. In this work, we derive a new effective Dirac Hamiltonian by assuming a more general…

介观与纳米尺度物理 · 物理学 2018-07-09 Maurice Oliva-Leyva , Chumin Wang

Within the tight binding approximation, we study the dependence of the electronic band structure and of the optical conductivity of a graphene single layer on the modulus and direction of applied uniaxial strain. While the Dirac cone…

介观与纳米尺度物理 · 物理学 2010-01-15 F. M. D. Pellegrino , G. G. N. Angilella , R. Pucci

Graphene is a mechanically robust 2D material promising for flexible optoelectronic applications. However, its electromagnetic properties under strain are experimentally poorly understood. Here we present the far-infrared transmission…

介观与纳米尺度物理 · 物理学 2017-05-22 Manisha Chhikara , Iaroslav Gaponenko , Patrycja Paruch , Alexey. B. Kuzmenko

We determine the band structure of graphene under strain using density functional calculations. The ab-initio band strucure is then used to extract the best fit to the tight-binding hopping parameters used in a recent microscopic model of…

介观与纳米尺度物理 · 物理学 2009-11-08 R. M. Ribeiro , Vitor M. Pereira , N. M. R. Peres , P. R. Briddon , A. H. Castro Neto

We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…

介观与纳米尺度物理 · 物理学 2015-02-26 Viet Hung Nguyen , Huy-Viet Nguyen , Jerome Saint Martin , Philippe Dollfus

Central to most applications involving monolayer graphene is its mechanical response under various stress states. To date most of the work reported is of theoretical nature and refers to tension and compression loading of model graphene.…

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