相关论文: Titanium Silicide Islands on Atomically Clean Si(1…
We study the tunneling conductance of nano-scale quantum ``shuttles'' in connection with a recent experiment (H. Park et al., Nature, 407, 57 (2000)) in which a vibrating C^60 molecule was apparently functioning as the island of a single…
To ensure the practical application of atomically thin transition metal dichalcogenides, it is essential to characterize their structural stability under external stimuli such as electric fields and currents. Using vacancy monolayer islands…
Single electron tunneling into small superconducting islands is sensitive to the gap energy of the excitations created in the process and, hence, depends on the electron number parity. At low temperature the properties of the system are…
We discuss inherent thermometry in a Superconductor - Normal metal - Superconductor tunnel junction. In this configuration, the energy selectivity of single-particle tunneling can provide a significant electron cooling, depending on the…
We report on the experimental observation by scanning tunneling microscopy at low temperature of ring-like features that appear around Co metal clusters deposited on a clean (110) oriented surface of cleaved p-type InAs crystals. These…
We present a method to measure the critical temperature of the island of a superconducting single electron transistor. The method is based on a sharp change in the slope of the zero-bias conductance as a function of temperature. We have…
Titanium silicide is a key contact material in advanced three-dimensional semiconductor device architectures. Here, we examine the formation of ultrathin Ti-silicide on Si(100) using a combination of non-destructive in-situ and ex-situ ion…
We examine the robustness of single-molecule tunneling diodes to thermal-environmental effects. The diode comprises three fragments: two different conjugated chemical groups at the boundaries, and a saturated moiety in between, breaking…
We report the dielectric functions of insulating tantalum nitride (TaN) films, deposited using atomic layer deposition (ALD) on 300 mm Si/SiO2 substrates, to demonstrate their suitability as tunnel barriers in tantalum-based Josephson…
Transmission electron microscopy (TEM) study on morphological changes in gold nanostructures deposited on Si (100) upon annealing under different vacuum conditions has been reported. Au thin films of thickness ~2.0 nm were deposited under…
Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
Superconductivity in the iron-chalcogenide series FeSe-Fe(Te, Se)-FeTe has been restricted to the near neighbor of iron selenide (FeSe), with a general consensus that iron telluride (FeTe) is not superconducting. In this study, we report…
The hole doped Si(111)(2root3x2root3)R30(degrees)-Sn interface exhibits a symmetry-breaking insulator-insulator transition below 100 K that appears to be triggered by electron tunneling into the empty surface-state bands. No such transition…
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…
Two new ultimately thin vanadium rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy and density-functional theory calculations. The…
We study charging effects and tunneling in the single electron box. Tunneling mixes different charge states and in the nonperturbative regime the charge in the island may be strongly screened. When charge states are nearly degenerate the…
Nickel islands are grown on W(110) at elevated temperatures. Islands with a thickness of two layers are investigated with scanning tunneling microscopy. Spectroscopic measurements reveal that nanometer sized areas of the islands exhibit…
We present an investigation of the atomic and electronic structure of graphene monolayer islands on the 6H-SiC(000-1)(3x3) (SiC(3x3)) surface reconstruction using scanning tunneling microscopy (STM) and spectroscopy (STS). The orientation…
Single layer graphene islands with a typical diameter of several nanometers were grown on a Pt (111) substrate. Scanning tunneling microscopy (STM) analysis showed most of islands are hexagonally shaped and the zigzag-type edge predominates…