相关论文: Titanium Silicide Islands on Atomically Clean Si(1…
Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conducting atomic force…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…
We have fabricated aluminum single-electron transistors in which the island is not in contact with the substrate. This new type of device, which can be called suspended single-electron transistor (SUSET), displayed well-defined I-V and…
We report the use of plasma-enhanced atomic layer deposition (PEALD) to fabricate single-electron transistors (SETs) featuring ultra-thin (~1 nm) tunnel-transparent SiO2 in Ni-SiO2-Ni tunnel junctions. We show that as a result of the O2…
We have fabricated a variety of novel molecular tunnel junctions based on self-assembled-monolayers (SAM) of two-component solid-state mixtures of molecular wires (1,4 methane benzene-dithiol; Me-BDT with two thiol anchoring groups), and…
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…
Atomically precise donor-based quantum devices are a promising candidate for scalable solid-state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable…
An ultra-small Coulomb blockade device can be regarded as a mesoscopic artificial atom system and provides a rich experimental environment for studying quantum transport phenomena[1]. Previously, these quantum effects have been investigated…
We consider a hybrid single-electron transistor (SET) constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (S-I-N-I-S), operated as a turnstile.…
We investigate the properties of a hybrid single electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from…
We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…
A new nano-lithography technique compatible with conducting oxide interfaces, which requires a single lithographic step with no additional amorphous layer deposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3 interface…
Single-event burnout and single-event leakage current (SELC) in SiC power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby…
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the device characteristic size is…
Quantum confined devices of three-dimensional topological insulators have been proposed to be promising and of great importance for studies of confined topological states and for applications in low energy-dissipative spintronics and…
The atomic structure of well-ordered single steps on the Si(111)-\sqrt{3}\times\sqrt{3}-Sn surface and the dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed using low-temperature scanning tunneling…