相关论文: Specific heat study of Ga1-xMnxAs

The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical…

Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by…

High- and low-field magneto-transport measurements, as well as SQUID measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various…

Specific heat and magnetization results as a function of field on single- and poly-crystalline samples of Ce(1-x)La(x)RhIn(5) show 1.) a specific heat gamma of about 100 mJ/moleK^2 (in agreement with recent dHvA results of Alvers et al.);…

Various experimental results providing information on thermodynamic density of states in (Ga,Mn)As are analyzed theoretically assuming that holes occupy GaAs-like valence bands. Allowing for Gaussian fluctuations of magnetization, the…

The Curie temperature TC is investigated as a function of the hole concentration p in thin films of ferromagnetic semiconductor (Ga,Mn)As. The magnetic properties are probed by transport measurements and p is varied by the application of an…

We employ the dynamical mean field approximation to perform a systematic study of magnetism in Ga_{1-x}Mn_xAs. Our model incorporates the effects of the strong spin-orbit coupling on the J=3/2 GaAs valence bands and of the exchange…

We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used,…

Ferromagnetic properties of In1-xMnxAs thin films were investigated. Room temperature ferromagnetic order was observed in nominally single-phase films with x = 0.01-0.10. Magnetization measurements indicated that these In1-xMnxAs samples…

Magnetic and specific-heat measurements are performed in three different samples of LaMnO_{3+\delta}, with \delta=0.11, 0.15 and 0.26, presenting important disorder effects, such as carrier localization, due to high amounts of La and Mn…

By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the…

Specific-heat measurements are reported near the Curie temperature ($T_C$~= 320 K) on tri-glycine sulfate. Measurements were made on crystals whose surfaces were either non-grounded or short-circuited, and were carried out in magnetic…

Using a high-resolution differential technique we have determined the electronic specific heat coefficient gamma(T) of Ba1-xKxFe2As2 with x=0 to 1.0, at temperatures (T) from 2K to 380K and in magnetic fields H=0 to 13T. In the normal state…

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn…

The specific heat of polycrystalline Mg$^{11}$B$_{2}$ has been measured with high resolution ac calorimetry from 5 to 45 K at constant magnetic fields. The excess specific heat above T$_{c}$ is discussed in terms of Gaussian fluctuations…

We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman…

In the immediate vicinity of the critical temperature (T$_c$) of a phase transition, there are fluctuations of the order parameter, which reside beyond the mean-field approximation. Such critical fluctuations usually occur in a very narrow…

We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018 to 0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the…

We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system…

We have measured the specific heat and magnetization {\it versus} temperature in a single crystal sample of superconducting La$_{2}$CuO$_{4.11}$ and in a sample of the same material after removing the excess oxygen, in magnetic fields up to…