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We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary…

We study the interplay of Klein tunneling (= interband tunneling) between n-doped and p-doped regions in graphene and Andreev reflection (= electron-hole conversion) at a superconducting electrode. The tunneling conductance of an n-p-n…

介观与纳米尺度物理 · 物理学 2007-06-10 A. Ossipov , M. Titov , C. W. J. Beenakker

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport…

Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation…

介观与纳米尺度物理 · 物理学 2013-08-27 Peter Rickhaus , Romain Maurand , Ming-Hao Liu , Markus Weiss , Klaus Richter , Christian Schönenberger

Using the tight-binding model with long-range Coulomb interactions between electrons, we study some of the electronic properties of graphene. The Coulomb interactions are treated with the renormalized-ring-diagram approximation. By…

强关联电子 · 物理学 2011-11-09 Xin-Zhong Yan , C. S. Ting

In present work, we theoretically study the electron wave's focusing phenomenon in a single layered graphene pn junction(PNJ) and obtain the electric current density distribution of graphene PNJ, which is in good agreement with the…

介观与纳米尺度物理 · 物理学 2015-05-30 Weihua Mu , Gang Zhang , Yunqing Tang , Zhongcan Ou-Yang

We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at…

介观与纳米尺度物理 · 物理学 2010-06-21 Pierre Carmier , Caio Lewenkopf , Denis Ullmo

Doped graphene sheets are pseudochiral two-dimensional Fermi liquids with abnormal electron-electron interaction physics. We address graphene's Fermi liquid properties quantitatively using a microscopic random-phase-approximation theory and…

介观与纳米尺度物理 · 物理学 2009-11-13 Marco Polini , Reza Asgari , Yafis Barlas , T. Pereg-Barnea , A. H. MacDonald

The density of electron-hole pairs produced in a graphene sample immersed in a homogeneous time-dependent electrical field is evaluated. Because low energy charge carriers in graphene are described by relativistic quantum mechanics, the…

介观与纳米尺度物理 · 物理学 2017-04-24 F. Fillion-Gourdeau , P. Blain , D. Gagnon , C. Lefebvre , S. MacLean

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…

材料科学 · 物理学 2015-05-27 Tianhua Yu , Chen-Wei Liang , Changdong Kim , Bin Yu

The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the…

We present a theoretical study of electron wave functions in ballistic circular n-p junctions of bilayer graphene. Similarly to the case of a circular n-p junction of monolayer graphene, we find that (i) the wave functions form caustics…

介观与纳米尺度物理 · 物理学 2009-10-13 Cs. Peterfalvi , A. Palyi , J. Cserti

We show simultaneous p and n type carrier injection in bilayer graphene channel by varying the longitudinal bias across the channel and the top gate voltage. The top gate is applied electrochemically using solid polymer electrolyte and the…

介观与纳米尺度物理 · 物理学 2009-09-08 Biswanath Chakraborty , Anindya Das , A. K. Sood

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction…

介观与纳米尺度物理 · 物理学 2008-02-21 M. M. Fogler , L. I. Glazman , D. S. Novikov , B. I. Shklovskii

The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the…

介观与纳米尺度物理 · 物理学 2022-01-19 Son T. Le , Albert F. Rigosi , Joseph A. Hagmann , Christopher Gutierrez , Ji Ung Lee , Curt A. Richter

Multi-layer graphene on the carbon face of silicon carbide is an intriguing electronic system which typically consists of a stack of ten or more layers. Rotational stacking faults in this system dramatically reduce inter-layer coherence. In…

介观与纳米尺度物理 · 物理学 2010-09-01 Rosario E. V. Profumo , Marco Polini , Reza Asgari , Rosario Fazio , A. H. MacDonald

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed,…

介观与纳米尺度物理 · 物理学 2011-12-30 M. C. Lemme , F. H. L. Koppens , A. L. Falk , M. S. Rudner , H. Park , L. S. Levitov , C. M. Marcus

We report a first principles investigation of photocurrent generation by graphene PN junctions. The junctions are formed by either chemically doping with nitrogen and boron atoms, or by controlling gate voltages. Non-equilibrium Green's…

计算物理 · 物理学 2015-06-04 Jingzhe Chen , Yibin Hu , Hong Guo

The electronic and transport properties of aluminum-graphene composite materials were investigated using ab initio plane wave density functional theory. The interfacial structure is reported for several configurations. In some cases, the…

材料科学 · 物理学 2024-02-12 K. Nepal , C. Ugwumadu , K. N. Subedi , K. Kappagantula , D. A. Drabold

We present an {\it ab initio} many-body GW calculation of the self-energy, the quasiparticle band plot and the spectral functions in free-standing undoped graphene. With respect to other approaches, we numerically take into account the full…

材料科学 · 物理学 2008-12-02 P. E. Trevisanutto , C. Giorgetti , L. Reining , M. Ladisa , V. Olevano