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相关论文: Enhanced shot noise in carbon nanotube field-effec…

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We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…

强关联电子 · 物理学 2009-10-30 G. Iannaccone , G. Lombardi , M. Macucci , B. Pellegrini

In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Krompiewski

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain…

介观与纳米尺度物理 · 物理学 2015-06-25 F. Wu , T. Tsuneta , R. Tarkiainen , D. Gunnarsson , T. H. Wang , P. J. Hakonen

We have developed a theoretical formalism to investigate the contribution of fluctuation of Coulomb interaction to the shot noise based on Keldysh non-equilibrium Green's function method. We have applied our theory to study the behavior of…

介观与纳米尺度物理 · 物理学 2015-06-03 Duo Li , Lei Zhang , Fuming Xu , Jian Wang

We have investigated shot noise in multiterminal, diffusive multiwalled carbon nanotubes (MWNTs) at 4.2 K over the frequency f = 600 - 850 MHz. Quantitative comparison of our data to semiclassical theory, based on non-equilibrium…

介观与纳米尺度物理 · 物理学 2010-06-30 T. Tsuneta , P. Virtanen , F. Wu , T. Wang , T. T. Heikkilä , P. J. Hakonen

The sensitivity of shot noise to the interplay between Kondo correlations and superconductivity is investigated in a carbon nanotube quantum dot connected to superconducting electrodes. Depending on the gate voltage, the SU(2) and SU(4)…

We present theoretical study of shot noise in single wall metallic carbon nanotubes weakly coupled to either nonmagnetic or ferromagnetic leads. Using the real-time diagrammatic technique, we calculate the current, Fano factor and tunnel…

介观与纳米尺度物理 · 物理学 2009-11-13 I. Weymann , J. Barnas , S. Krompiewski

We investigate the effect of electron-phonon inelastic scattering on shot noise in nanoscale junctions in the regime of quasi-ballistic transport. We predict that when the local temperature of the junction is larger than its lowest…

介观与纳米尺度物理 · 物理学 2016-08-31 Yu-Chang Chen , Massimiliano Di Ventra

In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the…

介观与纳米尺度物理 · 物理学 2009-11-10 Ivana Djuric , Bing Dong , H. L. Cui

We have investigated shot noise and conductance of multi-terminal graphene nanoribbon devices at temperatures down to 50 mK. Away from the charge neutrality point, we find a Fano factor $F \approx 0.4$, nearly independent of the charge…

介观与纳米尺度物理 · 物理学 2015-06-17 Z. B. Tan , A. Puska , T. Nieminen , F. Duerr , C. Gould , L. W. Molenkamp , B. Trauzettel , P. J. Hakonen

We report a precise experimental study on the shot noise of a quantum point contact (QPC) fabricated in a GaAs/AlGaAs based high-mobility two-dimensional electron gas (2DEG). The combination of unprecedented cleanliness and very high…

We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the…

介观与纳米尺度物理 · 物理学 2015-05-19 V. S. Khrapai , D. V. Shovkun

We present a novel method for the evaluation of shot noise in quasi one-dimensional field-effect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the…

介观与纳米尺度物理 · 物理学 2015-05-13 Alessandro Betti , Gianluca Fiori , Giuseppe Iannaccone

We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency…

介观与纳米尺度物理 · 物理学 2011-03-11 Sergey Kafanov , Per Delsing

Current noise in nanoscale systems provides additional information beyond the electronic conductance. We report measurements at room temperature of the nonequilibrium "excess" noise in ensembles of atomic-scale gold junctions repeatedly…

介观与纳米尺度物理 · 物理学 2014-06-11 Ruoyu Chen , Patrick Wheeler , D. Natelson

The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a…

介观与纳米尺度物理 · 物理学 2010-05-13 J. Chaste , E. Pallecchi , P. Morfin , G. Feve , T. Kontos , J. -M. Berroir , P. Hakonen , B. Placais

We formulate a theory for shot noise in quantum nanoelectromechanical systems. As a specific example, the theory is applied to a quantum shuttle, and the zero-frequency noise, measured by the Fano factor F, is computed. F reaches very low…

介观与纳米尺度物理 · 物理学 2007-05-23 Tomas Novotny , Andrea Donarini , Christian Flindt , Antti-Pekka Jauho

Using nonequilibrium Green functions and several complementary many-body approximations we calculate shot noise and spin dependent conductance in carbon nanotube semiconducting quantum dot in spin-orbital Kondo regime. We point out on the…

介观与纳米尺度物理 · 物理学 2010-04-19 Stanislaw Lipinski , Damian Krychowski

We report first-principles calculations of shot noise properties of parallel carbon wires in the regime in which the interwire distance is much smaller than the inelastic mean free path. We find that, with increasing interwire distance, the…

介观与纳米尺度物理 · 物理学 2009-11-10 Johan Lagerqvist , Yu-Chang Chen , Massimiliano Di Ventra

We study sequential tunneling through a metallic nanoparticle close to the Stoner instability coupled to parallely magnetized electrodes. Increasing the bias voltage successively opens transport channels associated with excitations of the…

介观与纳米尺度物理 · 物理学 2012-04-20 Björn Sothmann , Jürgen König , Yuval Gefen
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