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We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Z. Y. Weng

We summarize some characteristic features of the frustrated magnetic interactions in spin-orbital models adequate for cubic transition metal oxides with orbital degeneracy. A generic tendency towards dimerization, found already in the…

强关联电子 · 物理学 2015-06-24 Andrzej M. Oles

Sr2IrO4 was predicted to be an unconventional superconductor upon carrier doping since it highly resembles the high-temperature cuprates. Here, to understand carrier doping effect on spin-orbit coupled Mott insulator Sr2IrO4, the electronic…

强关联电子 · 物理学 2017-01-05 Jie Cheng , Xuanyong Sun , Shengli Liu , Bin Li , Haiyun Wang , Peng Dong , Yu Wang , Wei Xu

Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by…

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field…

高能物理 - 理论 · 物理学 2017-02-01 Matteo Baggioli , Oriol Pujolas

Sr2IrO4 exhibits a novel insulating state assisted by spin-orbit interactions. A series of polycrystalline samples of Sr2-xIrO4 have been synthesized. It is found that deep Sr-vacancies of Sr2-xIrO4 greatly reduce the rotation of IrO6…

强关联电子 · 物理学 2016-11-01 Xuanyong Sun , S. L. Liu , Haiyun Wang , Bin Li , Jie Cheng , Z. H. Wang

On demand current-driven insulator-to-metal transition (IMT) is pivotal for the next generation of energy-efficient and scalable microelectronics. IMT is a key phenomenon observed in various quantum materials, and it is enabled by the…

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of…

We investigate the altermagnetic properties of strongly-correlated transition metal oxides considering the family of the quasi two-dimensional A2BO4 and three-dimensional ABO3. As a test study, we analyze the Mott insulators Ca2RuO4 and…

强关联电子 · 物理学 2023-09-06 Giuseppe Cuono , Raghottam M. Sattigeri , Jan Skolimowski , Carmine Autieri

The simultaneous presence of sizable spin-orbit interactions and electron correlations in iridium oxides has led to predictions of novel ground states including Dirac semimetals, Kitaev spin liquids, and superconductivity. Electron and hole…

强关联电子 · 物理学 2017-02-22 S. Chikara , G. Fabbris , J. Terzic , G. Cao , D. Khomskii , D. Haskel

Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical…

强关联电子 · 物理学 2015-04-22 Chuck-Hou Yee , Leon Balents

Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…

材料科学 · 物理学 2025-12-19 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao , Jiahui Ji , Guowei Zhou , Huihui Ji , Xiaohong Xu

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio

There has been a long-standing debate on the coexistence between itinerant electrons and localized spins in the PdCrO$_2$ delafossite. By means of the charge self-consistent combination of density functional theory and dynamical mean-field…

强关联电子 · 物理学 2018-08-21 Frank Lechermann

The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated $d$-orbitals that are hybridized with surrounding ligand oxygen $p$ orbitals to varying degrees. Their physics is thus…

强关联电子 · 物理学 2025-08-05 Samuel Milner , Steven Johnston , Adrian Feiguin

The Weyl semimetallic compound Eu2Ir2O7 along with its hole doped derivatives (which is achieved by substituting trivalent Eu by divalent Sr) are investigated through transport, magnetic and calorimetric studies. The metal-insulator…

强关联电子 · 物理学 2018-01-17 A. Banerjee , J. Sannigrahi , S. Giri , S. Majumdar

The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high pressure electric resistance and…

The first-order metal-insulator transition (MIT) in paramagnetic $V_{2}O_{3}$ is studied within the ab-initio scheme LDA+DMFT, which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of…

强关联电子 · 物理学 2009-11-07 M. S. Laad , L. Craco , E. Müller-Hartmann