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相关论文: Self-Doping Induced Orbital-Selective Mott Transit…

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Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

Ca$_2$FeMnO$_6$ (CFMO) double perovskite was studied using first principles density functional theory and tight-binding (TB) Hamiltonian modeling using extended Hubbard model. We have shown by electronic structure analysis that charge- and…

材料科学 · 物理学 2024-03-06 Arindam Sarkar , Hrishit Banerjee , Debashish Das , Prashant Singh , Aftab Alam

We propose the concept of "hybridization-switching induced Mott transition" which is relevant to a broad class of ABO$_3$ perovskite materials including BiNiO$_3$ and PbCrO$_3$ which feature extended $6s$ orbitals on the A-site cation (Bi…

强关联电子 · 物理学 2019-01-21 Atanu Paul , Anamitra Mukherjee , Indra Dasgupta , Arun Paramekanti , Tanusri Saha-Dasgupta

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…

超导电性 · 物理学 2013-07-17 E. R. Ylvisaker , W. E. Pickett

We study the conductivity, density of states, and magnetic correlations of a two dimensional, two band fermion Hubbard model using determinant Quantum Monte Carlo (DQMC) simulations. We show that an orbitally selective Mott transition…

强关联电子 · 物理学 2010-04-22 Karim Bouadim , George G. Batrouni , Richard T. Scalettar

We investigate the interplay between Coulomb driven orbital order and octahedral distortions in strongly correlated Mott insulators due to orbital dilution, i.e., doping by metal ions without an orbital degree of freedom. In particular, we…

强关联电子 · 物理学 2020-07-30 Wojciech Brzezicki , Filomena Forte , Canio Noce , Mario Cuoco , Andrzej M. Oleś

We study the effects of electron doping in Mott insulators containing d^4 ions such as Ru4+, Os4+, Rh5+, and Ir5+ with J=0 singlet ground state. Depending on the strength of the spin-orbit coupling, the undoped systems are either…

强关联电子 · 物理学 2016-01-12 Jiří Chaloupka , Giniyat Khaliullin

The mechanisms that drive metal-to-insulator transitions (MIT) in correlated solids are not fully understood. For example, the perovskite (PV) SrCoO3 is a FM metal while the oxygen-deficient (n-doped) brownmillerite (BM) SrCoO2.5 is an…

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

Tuning of spin-orbit coupling and electron correlation effects in pyrochlore iridates is considered for many interesting phenomena. We have investigated the temperature evolution of structural, magnetic and electronic properties in doped…

强关联电子 · 物理学 2019-05-07 Harish Kumar , A. K. Pramanik

Creating heterostructures with graphene/graphite is a practical method for charge-doping $\alpha$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy…

Spin-orbit-coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interests especially for their electron-doped states. However, previous experiments are largely limited…

Optical conductivity spectra of cubic pyrochlore $Y_{2-x} Bi_x Ru_2 O_7$ (0.0$\leq ${\it x}$\leq $2.0) compounds are investigated. As a metal-insulator transition (MIT) occurs around {\it x}$=$0.8, large spectral changes are observed. With…

强关联电子 · 物理学 2009-11-11 J. S. Lee , S. J. Moon , T. W. Noh , T. Takeda , R. Kanno , S. Yoshii , M. Sato

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

The intrinsic instability of underdoped copper oxides towards inhomogeneous states is one of the central puzzles of the physics of correlated materials. The influence of the Mott physics on the doping-temperature phase diagram of copper…

The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb…

Based on a microscopic theoretical study, we show that novel superconductivity is induced by carrier doping in layered perovskite Ir oxides where a strong spin-orbit coupling causes an effective total angular momentum J_{eff}=1/2 Mott…

超导电性 · 物理学 2013-01-14 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

The metal-insulator transition (MIT) in paramagnetic VO2 is studied within LDA+DMFT(IPT), which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of the Coulomb U=5.0eV, we show how the…

强关联电子 · 物理学 2007-05-23 M. S. Laad , L. Craco , E. Müller-Hartmann

Double perovskite oxides (DPOs) with two transition metal ions ($A_2$$BB^\prime$O$_6$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial thin films on single…

Significant efforts have been dedicated to achieving excitonic insulators. In this paper, we explore a new problem of doping excitons into a Mott insulator instead of a band insulator. Specifically, we start with a Mott insulator on a…

强关联电子 · 物理学 2024-07-16 Hui Yang , Ya-Hui Zhang
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