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相关论文: Self-Doping Induced Orbital-Selective Mott Transit…

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The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…

Introducing partial sum rules for the optical multiplet transitions, we outline a unified approach to magnetic and optical properties of strongly correlated transition metal oxides. On the example of LaVO$_3$ we demonstrate how the…

强关联电子 · 物理学 2007-05-23 Giniyat Khaliullin , Peter Horsch , Andrzej M. Oles

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

Achieving fundamental understanding of insulator-to-metal transitions (IMTs) in strongly correlated systems and their persistent and reversible control via nonequilibrium drive are prime targets of current condensed matter research.…

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…

材料科学 · 物理学 2020-01-22 S. S. Majid , S. R. Sahu , A. Ahad , K. Dey , K. Gautam , F. Rahman , P. Behera , U. Deshpande , V. G. Sathe , D. K. Shukla

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

The Mott insulator Ca2RuO4 is a paradigmatic example among transition metal oxides, where the interplay of charge, spin, orbital, and lattice degrees of freedom leads to competing quantum phases. In this paper, we focus on and review some…

强关联电子 · 物理学 2024-11-26 Giuseppe Cuono , Filomena Forte , Alfonso Romano , Canio Noce

One of today's most exciting research frontier and challenge in condensed matter physics is known as Mottronics, whose goal is to incorporate strong correlation effects into the realm of electronics. In fact, taming the Mott…

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…

We study the origin of the temperature-induced Mott transition in Ca2RuO4. As a method we use the local-density approximation+dynamical mean-field theory. We show the following. (i) The Mott transition is driven by the change in structure…

强关联电子 · 物理学 2011-06-14 E. Gorelov , M. Karolak , T. O. Wehling , F. Lechermann , A. I. Lichtenstein , E. Pavarini

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of…

The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…

强关联电子 · 物理学 2015-06-25 N. Blümer , C. Knecht , K. Pozgajcic , P. G. J. van Dongen

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…

强关联电子 · 物理学 2014-04-17 Krzysztof Dymkowski , Claude Ederer

We investigate the electronic structure and magnetic properties of a $J_\text{eff} = 1/2$ iridate Ca$_4$IrO$_6$ and the implications of doping electrons and holes using ab initio density functional theory. Our calculations considering…

强关联电子 · 物理学 2022-09-02 Avishek Singh , Jayita Chakraborty , Nirmal Ganguli

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

We study how the Mott metal-insulator transition (MIT) is influenced when we deal with electrons with different angular momenta. For lithium we found an essential effect when we include $p$-orbitals in the description of the Hilbert space.…

强关联电子 · 物理学 2009-11-10 Walter Alsheimer , Beate Paulus

The two-orbital degenerate Hubbard model with distinct hopping integrals is studied by combining dynamical mean-field theory with quantum Monte Carlo simulations. The role of orbital fluctuations for the nature of the Mott transition is…

强关联电子 · 物理学 2009-11-11 Akihisa Koga , Norio Kawakami , T. M. Rice , Manfred Sigrist

Motivated by recent experiments of a novel 5$d$ Mott insulator in Sr$_2$IrO$_4$, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling $\lambda$. The variational Monte Carlo method is used to obtain the…

强关联电子 · 物理学 2010-11-25 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively…

强关联电子 · 物理学 2021-07-13 S. Hameed , J. Joe , D. M. Gautreau , J. W. Freeland , T. Birol , M. Greven