相关论文: The elusive memristor: properties of basic electri…
It is rigorously proved that ideal memcapacitors and meminductors are not passive or lossless devices, nor are they satisfying the weaker notion of cyclo-passivity, which arises when dropping the requirement of non-negativity of the storage…
We show that extraordinary magnetoresistance (EMR) arises in systems consisting of two components; a semiconducting ring with a metallic inclusion embedded. The im- portant aspect of this discovery is that the system must have a…
Colossal magnetoresistance (CMR) is commonly observed in magnetic semiconductors when an external magnetic field is applied, usually accompanied by anomalous resistivity peaks or humps which were previously considered as evidence of a…
This study investigates 7-methylquinolinium halobismuthates (I, Br, and Cl) in two aspects: (1) their structural and semiconducting properties influenced by anionic composition, and (2) their memristive and plasticity characteristics for…
A quantum memristor is a resistive passive circuit element with memory engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated…
A representation of current is presented which can account for ideal conduction and distinguish superconductors, superfluids, ideal, and non-ideal conductors. The idea of the scheme is that different current operators and transport weights…
Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…
Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…
In this paper we report the occurrence of sliding bifurcations admitted by the memristive Murali-Lakshmanan-Chua circuit \cite{icha13} and the memristive driven Chua oscillator \citep{icha11}. Both of these circuits have a flux-controlled…
We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…
Memristors close the loop for I-V characteristics of the traditional, passive, semi-conductor devices. Originally proposed in 1971, the hunt for the memristor has been going ever since. The key feature of a memristor is that its current…
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can…
Memristors are continuously tunable resistors that emulate synapses. Conceptualized in the 1970s, they traditionally operate by voltage-induced displacements of matter, but the mechanism remains controversial. Purely electronic memristors…
This paper presents in-depth analysis of the excitable membranes of a biological system. We rigorously prove from the Chay neuron model that the state dependent voltage-sensitive potassium ion-channel and calcium sensitive potassium…
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…
The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our…
We have measured the transition process from the high to low resistivity states, i.e., the reset process of resistive switching based memristors based on Ni/HfO2/Si-n+ structures, and have also developed an analytical model for their…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
We report a memory resistance (memristor) behavior with nonlinear current-voltage characteristics and bipolar hysteretic resistance switching in the nanocolumnar manganite (LSMO) films. The switching from a high (HRS) to a low (LRS)…
Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…