相关论文: The elusive memristor: properties of basic electri…

Recent experiments on the amorphous magnetic semiconductor Gd_x Si_{1-x}, Phys. Rev. Lett. 77, 4652 (1996), ibid 83, 2266 (1999), ibid 84, 5411 (2000), ibid 85, 848 (2000), have revealed an insulator-metal transition (i-m-t), as a function…

The memristor is promising to be the basic cell of next-generation computation systems. Compared to the traditional MOSFET device, the memristor is efficient over energy and area. But one of the biggest challenges faced with researchers is…

Reversible circuits for modular multiplication $Cx$%$M$ with $x<M$ arise as components of modular exponentiation in Shor's quantum number-factoring algorithm. However, existing generic constructions focus on asymptotic gate count and…

Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits,…

Orbital degrees of freedom offer a largely untapped route to emergent dynamical phenomena in correlated quantum materials. However, it remains unclear whether collective orbital states can intrinsically generate both reactive and memory…

Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…

We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…

In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangements of magnets. The device is an active ring circuit comprising magnetic and electronic parts connected in series. The electric part…

Reasoned by its dynamical behavior, the memristor enables a lot of new applications in analog circuit design. Since some realizations are shown (e.g. 2007 by Hewlett Packard), the development of applications with memristors becomes more and…

Simulation frameworks such MemTorch, DNN+NeuroSim, and aihwkit are commonly used to facilitate the end-to-end co-design of memristive machine learning (ML) accelerators. These simulators can take device nonidealities into account and are…

I discuss a topological relation of the conduction property of a many-particle system on a periodic lattice at zero temperature to the energy spectrum. When the particle number per unit cell is an irreducible fraction $p/q$, an insulator…

Variable flux memory motors, which employ Low Coercive Force (LCF) magnets, achieve extended high-efficiency operation through controllable magnetization states. To address the need for a unified approach to defining and comparing the…

We discuss an investigation exploring students' difficulties with equations involving resistance, capacitance and inductance. We find that introductory physics students have great difficulty understanding, e.g., how the resistance of an…

In the present work we describe a way to assess memory capability of real devices, while proposing to the engineering community what to pursue to create devices with deep associated memory capability. The study of the signal produced by a…

Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…

Topological electromagnetism owing to nontrivial momentum-space topology of electrons in insulators gives rise to diverse anomalous magnetoelectric responses. While conventional inductors and capacitors are based on classical…

Existing compact models for memristive devices (including RRAM and CBRAM) all suffer from issues related to mathematical ill-posedness and/or improper implementation. This limits their value for simulation and design and in some cases,…

In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also…

We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100…

Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…