相关论文: Carrier relaxation in Si/SiO$_2$ quantum dots

Matrix-operator difference-differential equations for dynamics of spectroscopic transitions in 1D multiqubit exchange coupled (para)magnetic and optical systems by strong dipole-photon and dipole-phonon coupling are derived within the…

Black phosphorus is emerging as a promising semiconductor for electronic and optoelectronic applications. To study fundamental carrier properties, we performed ultrafast femtosecond pump-probe spectroscopy on thin film black phosphorus…

We study theoretically the spin relaxation rate in quasi-one-dimensional coupled double semiconductor quantum dots. We consider InSb and GaAs-based systems in the presence of the Rashba spin-orbit interaction, which causes mixing of…

The spin relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field,…

The nature of charge carriers in strange metals has become a topic of intense current investigation. Recent shot noise measurements in the quantum critical heavy fermion metal YbRh$_2$Si$_2$ revealed a suppression of the Fano factor that…

We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO$_2$ interface. Our measurements demonstrate that two-state fluctuations are localized at interfacial traps, with bias-dependent rates and…

Studying charge transport in models with nonlocal carrier--phonon interaction is difficult because it requires finite-temperature real-time correlation functions of mixed carrier--phonon operators. Focusing on models with discrete undamped…

General expressions for the electron- and hole-acoustical-phonon deformation potential Hamiltonian (H_{E-DP}) are derived for the case of Ge/Si and Si/Ge core/shell nanowire structures (NWs) with circular cross section. Based on the…

We have studied the absorption of electromagnetic radiation of an anisotropic quantum dot taking into account the spin-flip processes that is associated with the interaction of the electrons with optical phonons. It is shown that these…

Huang-Rhys (HR) factor, a dimensionless factor that characterizes electron-phonon coupling, has been extensively employed to investigate material properties in various fields. In the same spirit, we present a quantity called polaritonic HR…

We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum devices. By combining Hall-bar transport measurements with…

Carrier and phonon dynamics in a multilayer WSe2 film are captured by extreme ultraviolet (XUV) transient absorption (TA) spectroscopy at the W N6,7, W O2,3, and Se M4,5 edges (30-60 eV). After the broadband optical pump pulse, the XUV…

Intra and intersubband scattering rates and electron capture rates are considered when mediated by hybrid optical phonons in an AlAs/GaAs/AlAs double heterostructure confined between two outer metallic barriers. In evaluating scattering…

Recent experiments by Hayashi et al. [Phys. Rev. Lett. 91, 226804 (2003)] demonstrate coherent oscillations of a charge quantum bit (qubit) in laterally defined quantum dots. We study the intrinsic electron-phonon decoherence and gate…

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it…

We calculate the conductance through strongly correlated T-shaped molecular or quantum dot systems under the influence of phonons. The system is modelled by the extended Anderson-Holstein Hamiltonian. The finite-U mean-field slave boson…

The ab-initio theory of charge transport in semiconductors typically employs the lowest-order perturbation theory in which electrons interact with one phonon (1ph). This theory is accepted to be adequate to explain the low-field mobility of…

Electron relaxation, induced by acoustic phonons, is studied for coupled quantum rings in the presence of external fields, both electric and magnetic. We address the problem of a single electron in vertically coupled GaAs quantum rings.…

A strong electron-phonon interaction arises from the modulation of the superexchange interaction by phonons. As is studied in Phys. Rev. B 70, 184514 (2004), Cu-O bond stretching modes can be soft around (pm pi/a, 0) and (0, pm pi/a), with…

A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and…