相关论文: Carrier relaxation in Si/SiO$_2$ quantum dots
The relaxation of high-energy "hot" carriers in semiconductors is known to involve the redistribution of energy between (i) hot and cold carriers and (ii) hot carriers and phonons. Over the past few years, these two processes have been…
The decay time of the linear polarization degree of the luminescence in strongly confined semiconductor quantum dots with asymmetrical shape is calculated in the frame of second-order quasielastic interaction between quantum dot charge…
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit behaves as a charge qubit when the detuning is close to zero and as spin qubit for large detuning values. It is…
Frequency and dc magnetic field dependences of dynamic susceptibility in diluted paramagnets LiYF$_4$:Ho$^{3+}$ have been measured at liquid helium temperatures in the ac and dc magnetic fields parallel to the symmetry axis of a tetragonal…
We analyzed time evolution of the localized charge in the system of two interacting single level quantum dots (QDs) coupled with the continuous spectrum states in the presence of electron-phonon interaction. We demonstrated that…
We present studies of the electron transport and circular currents induced by the bias voltage and the magnetic flux threading a ring of three quantum dots coupled with two electrodes. Quantum interference of electron waves passing through…
The ground state carrier dynamics in self-assembled (In,Ga)As/GaAs quantum dots has been studied using time-resolved photoluminescence and transmission. By varying the dot design with respect to confinement and doping, the dynamics is shown…
The Hall effect is a powerful tool for investigating carrier type and density. For single-band materials, the Hall coefficient is traditionally expressed simply by $R_H^{-1} = -en$, where $e$ is the charge of the carrier, and $n$ is the…
Certain fractional quantum Hall edges have been predicted to undergo quantum phase transitions which reduce the number of edge channels and at the same time bind electrons together. However, detailed studies of experimental signatures of…
A theoretical model using electron-phonon scattering rate equations is developed for assessing carrier thermalization under steady-state conditions in two-dimensional systems. The model is applied to investigate the hot carrier effect in…
The thermalization of hot carriers and phonons gives direct insight into the scattering processes that mediate electrical and thermal transport. Obtaining the scattering rates for both hot carriers and phonons currently requires multiple…
Electronic transport in low-dimensional structures, such as thin bodies, nanosheets, nanoribbons and nanowires, is strongly affected by electron and phonon confinement, in addition to interface roughness. Here we use a quantum-transport…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
Using a two-dimensional finite-differences scheme to model spin transport in silicon devices with lateral geometry, we simulate the effects of spin relaxation at interfacial boundaries, i.e. the exposed top surface and at an…
Optical internal transitions relevant to ODR experiments are computed for the biexciton in a quantum dot in the strong confinement regime. Valence sub-band mixing effects are taken into account in second order pertubation theory. The…
As a result of absorption of X-ray quantum in a semiconductor, the generation of electron-hole pairs takes place in a small volume (diameter < 0.5 mkm). Their surplus energy is lost due to the scattering on phonons of the crystal lattice.…
We investigate a model for the CuO_2 plane of high-T_c superconductors where the charge carriers are coupled to A_{1g} and B_{1g} symmetric out-of plane vibrations of the oxygen atoms in the presence of local Hubbard correlations. The…
On the basis of density functional calculations and using Bader's atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable…
We consider quantum rings realized in materials where the dynamics of charge carriers mimics that of two-dimensional (2D) Dirac electrons. A general theoretical description of the ring-subband structure is developed that applies to a range…