相关论文: Carrier relaxation in Si/SiO$_2$ quantum dots

Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a…

Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with…

We investigate the longitudinal spin relaxation arising due to spin-flip transitions accompanied by phonon emission in quantum dots where the strength of the Rashba spin-orbit coupling is a random function of the lateral (in-plane)…

We investigate electron charge decoherence in a laterally-coupled single-electron semiconductor double quantum dot through electron-phonon interaction. We analytically and numerically evaluate the relaxation and dephasing rates due to…

We theoretically study the coherent nonlinear response of electrons confined in semiconductor quantum wells under the effect of an electromagnetic radiation close to resonance with an intersubband transition. Our approach is based on the…

The structural, electronic and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended…

Carrier interaction with phonons, photons, impurities, and electrons have been addressed in semiconductor nanoscale systems with carrier confinement in one and two dimensions subjected to a quantizing magnetic field and without it.

We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…

The effect of quantum confinement in the optical absorption spectra of atomically thin {\alpha}-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated {\alpha}-In2Se3 flakes. The band…

We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping ($\sim$10$^{13}$ cm$^{-2}$) due to hexagonal…

The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon…

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…

At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can…

Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…

The temperature dependence of the energy relaxation of photoexcited (PE) carriers is used as a probe of the electronic structure of YBa_2Cu_3O_(7-d) in the insulating d~0.8 and metallic d~0.1 phases. The energy relaxation rate to phonons is…

We investigate the phonon-induced decoherence and dissipation in a donor-based charge quantum bit realized by the orbital states of an electron shared by two dopant ions which are implanted in a silicon host crystal. The dopant ions are…

The phonon-induced spin relaxation in a two-dimensional quantum dot embedded inside a semiconductor slab is investigated theoretically. An enhanced relaxation rate is found due to the phonon van Hove singularities. Oppositely, a vanishing…

In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…

Using a single-band model, the lowest transition energy was analysed between the lowest unoccupied molecular orbital (LUMO) of the conduction band and the highest occupied molecular orbital (HOMO) of the valence band. We focus on…

We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where…