预测激发半导体中载流子的电离阈值
其他凝聚态物理
2009-11-13 v1
作者:
David Snoke
摘要
本文提出了一组简单的公式,用于预测光激发半导体中电子 - 空穴 - 激子气体中电离载流子的比例。这些结果与近期关于单量子阱和双量子阱中激子的实验相关。
引用
@article{arxiv.0709.1415,
title = {Predicting the Ionization Threshold for Carriers in Excited Semiconductors},
author = {David Snoke},
journal= {arXiv preprint arXiv:0709.1415},
year = {2009}
}
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